%A XIE Chao;DU Jian-guo*;LIU Lei;YI Li;LIU Hong;CHEN Zhi;LI Jing
%T In Situ Raman Spectrum Peak Test of Monocrystalline Silicon Wafer under Quantitative Uniaxial Pressure
%0 Journal Article
%D 2016
%J SPECTROSCOPY AND SPECTRAL ANALYSIS
%R 10.3964/j.issn.1000-0593(2016)04-1261-05
%P 1261-1265
%V 36
%N 04
%U {http://www.gpxygpfx.com/CN/abstract/article_8360.shtml}
%8 2016-04-01
%X The relationship between total uniaxial stress (*F/N*) and strain (*ε*/μm/m) of wolfram carbide (WC) base in diamond anvil cell was measured: *F*=3.395*ε*+12.212 (*R*^{2}=0.999 9), and a device was developed which can be used to test the spectral characteristics of the sample in situ under quantitative uniaxial pressure. The Raman spectrum peak of monocrystalline silicon wafer was tested by using this device under a uniaxial pressure up to 2 548.664 MPa. The test result shows that, when the pressure is perpendicular to [100] crystal plane of the monocrystalline silicon sample, the 519.12 cm^{-1} peak shifts towards high frequency linearly with increasing pressure, and the linear relationship between shift amount of Raman spectrum peak frequency (Δ*ω*/cm^{-1}) and pressure (*σ*/MPa) is: *σ*=365.80Δ*ω*+10.19, wherein the constant may reflect the presence of residual stress in the sample to some extent, and some difference between monomial coefficient and the result of theoretical calculations may be due to sample stress orientation in this experiment.The constant in the Δ*ω-σ* linear relationship reflects experimental errors and the value of residual inner stress to some extent.