%A CHEN Xiao-bo;;YANG Wen;DUAN Liang-fei;ZHANG Li-yuan;YANG Pei-zhi*;SONG Zhao-ning %T Spectral Characteristics of Si Quantum Dots Embedded in SiNx Thin Films Prepared by Magnetron Co-Sputtering %0 Journal Article %D 2015 %J SPECTROSCOPY AND SPECTRAL ANALYSIS %R 10.3964/j.issn.1000-0593(2015)07-1770-04 %P 1770-1773 %V 35 %N 07 %U {https://www.gpxygpfx.com/CN/abstract/article_7780.shtml} %8 2015-07-01 %X The silicon-rich SiNx films were fabricated on Si(100) substrate and quartz substrate at different substrate temperatures varying from room temperature to 400 ℃ by bipolar pulse ane RF magnetron co-sputtering deposition technique. After deposition, the films were annealed in a nitrogen atmosphere by rapid photo-thermal annealing at 1 050 ℃ for 3 minutes. This thermal step allows the formation of the silicon quantum dots. Fourier transform infrared spectroscopy, Raman spectroscopy, grazing incidence X-ray diffraction and photoluminescence spectroscopy were used to analyze the bonding configurations, microstructures and luminescence properties of the films. The experimental results showed that: silicon-rich Si-N bonds were found in Fourier transform infrared spectra, suggesting that the silicon-rich SiNx films were successfully prepared; when the substrate temperature was not lower than 200 ℃, the Raman spectra of the films showed the transverse optical mode of Si-Si vibration, while the significant diffraction peaks of Si(111) and Si(311) were shown in grazing incidence X-ray diffraction spectra, confirming the formation of silicon quantum dots; our work indicated that there was an optimal substrate temperature (300 ℃), which could significantly increase the amount and the crystalline volume fraction of silicon quantum dots; three visible photoluminescence bands can be obtained for both 300 ℃ sample and 400 ℃ sample, and in combination with Raman results, the emission peaks were reasonably explained by using the quantum confinement effect and radiative recombination defect state of Si nanocrystals; the average size of the silicon quantum dots is 3.5 and 3.4 nm for the 300 ℃ sample and 400 ℃ sample, respectively. These results are useful for optimizing the fabrication parameters of silicon quantum dots embedded in SiNx thin films and have valuable implications for silicon based photoelectric device applications.