%A %T Luminescence and Long Afterglow Properties of In3+ and Si4+ Co-Doped ZnBi0.02Ga1.98O4∶Cr3+ %0 Journal Article %D 2020 %J SPECTROSCOPY AND SPECTRAL ANALYSIS %R 10.3964/j.issn.1000-0593(2020)12-3716-06 %P 3716-3721 %V 40 %N 12 %U {https://www.gpxygpfx.com/CN/abstract/article_11727.shtml} %8 2020-12-01 %X Long afterglow materials have broad application prospects in biomedicine, information storage and so on. Materials with blue, green and yellow afterglow in different systems have successfully prepared, and some of them with good long afterglow properties have met the requirements of practical applications. However, the red long afterglow materials are not ideal in terms of their luminosity and afterglow time. In this paper, In3+ and Si4+ co-doped Zn(Bi)Ga2O4∶Cr3+ materials with deep red light luminescence were prepared by high temperature solid-state reaction through. The properties of the luminescent spectra, long afterglow and thermoluminescence of the as-prepared materials were systematically studied. XRD shows that In3+ and Si4+ ions participate in the solid state reaction and occupy the appropriate lattice position of Zn(Bi)Ga2O4, and the co-doped In3+ and Si4+ ions have not changed the structure of the host of ZnGa2O4. The excitation spectra of Zn(Bi)Ga2O4∶1%Cr3+; Zn(Bi)Ga2O4∶1%Cr3+, 9%In3+ and Zn(Bi)Ga2O4∶1%Cr3+, 9%In3+, 7%Si4+ have been measured by monitoring emission wavelength at 687 nm. The co-doped In3+ and Si4+ ions change the local environment of Cr3+, thereby causing the red-shift of the excitation band corresponding to the charge transfer from the 2p orbital of O2- to the 4s4p orbital of Ga3+. Meanwhile, the strength of the 4A2-4T1 and 4A2-4T2 transitions of Cr3+ is also significantly enhanced by the In3+ and Si4+ co-doped. From the emission spectra excited by the 440 nm light of xenon lamp, it is found that the introduction of In3+ ions changes the local environment of some Cr3+ ions in octahedrons, results in the different emission peak positions of Cr3+ in different lattice sites. This leads to the inhomogeneous broadening of the luminescence spectra in the In3+ doped samples. At the same time, the change of the local environment of Cr3+ ions caused by In3+ doping also improves the emission intensity of the samples. The In3+ and Si4+ co-doping further enhances the inhomogeneous broadening of the emission spectra and the luminescence intensity is also intensified. It is found that Zn(Bi)Ga2O4∶Cr3+ co-doped with 9%In3+, 7%Si4+ presents the best photoluminescence properties in our experiment. Based on the measured afterglow decay curves, it is found that the introduction of In3+ can greatly improve the afterglow brightness of the sample and prolong the afterglow time. Moreover, the further introduced Si4+ ions can ulteriorly improve the afterglow brightness and prolong the afterglow time. Thermoluminescence tests show that the introduction of In3+ ions can increase the depth of trap levels in the sample, while the co-doped In3+, Si4+ ions with appropriate concentrations not only increase the depth of the trap but also enhance the concentration of traps in the sample. The investigation in the present work proves that Zn(Bi)Ga2O4∶Cr3+ co-doped with 9%In3+, 3%Si4+ have the best long afterglow properties. Related studies provide a meaningful reference for further optimization of long afterglow gallate materials.