| 光谱学与光谱分析 |
|
|
|
|
|
| The Influence of Deposition Pressure on the Properties of Hydrogenated Amorphous Silicon Thin Films |
| YUAN Jun-bao1, YANG Wen1, CHEN Xiao-bo1, 2, YANG Pei-zhi1*, SONG Zhao-ning3 |
1. Key Laboratory of Education Ministry for Advance Technique and Preparation of Renewable Energy Materials, Yunnan Normal University, Kunming 650092, China
2. School of Physics and Mech-tronic Engineering, Sichuan University of Arts and Science, Dazhou 635000, China
3. Department of Physics and Astronomy, University of Toledo, Toledo OH 43606, USA |
|
|
|
|
Abstract Hydrogenated amorphous silicon (a-Si∶H) thin films on soda-lime glass substrates were deposited by plasma enhanced chemical vapor deposition (PECVD) using disilane and hydrogen as source gases. To study the influence of deposition pressure on the deposition rate, optical band gap and structure factor, a surface profilometer, an ultraviolet-visible spectrometer, a Fourier transform infrared (FTIR) spectrometer and a scanning electron microscopy (SEM) were used to characterize the deposited thin films. It is found that the deposition rate firstly increased and then decreased and the optical band gap monotonically decreased with the increasing deposition pressure. Moreover, the formation of SiH bond was preferable to the formation of SH2 or SiH3 bond when the deposition pressure was less than 210 Pa, while it was opposite when the deposition pressure is higher than 210 Pa. Finally, the deposition pressure in the range of 110～210 Pa was found to be more suitable for the preparation of high quality a-Si∶H thin films.
|
|
Received: 2014-11-17
Accepted: 2015-03-18
|
|
|
|
Corresponding Authors:
YANG Pei-zhi
E-mail: pzhyang@hotmail.com
|
|
[1] Davydova E, Timoshkin A, Sevastianova T, et al. Molecular Physics, 2009, 107(8-12): 899.
[2] Kim Taehwan, Kim Dong-Hyun, Lee Ho-Jun. The Transactions of The Korean Institute of Electrical Engineers, 2014, 63(2): 250.
[3] Kim D Y, Guijt E, Zeman M, et al. Progress in Photovoltaics: Research and Applications, 2015, 26(6): 671.
[4] Huang Jungjie，Chen Chaonan. Thin Solid Films，2013, 529: 454.
[5] Lee Shuo-Jen, Chen Yi-Ho, Hu Sung-Cheng, et al. Journal of Alloys and Compounds, 2013, 558: 95.
[6] Lee S W, Seo J M, Koo J H, et al. Thin Solid Films, 2010, 519(2): 823.
[7] Shalav A. Progress in Photovoltaics: Research and Applications, 2009, 17(2): 151.
[8] águas Hugo, Ram Sanjay K, Araújo Andreia, et al. Energy & Environmental Science, 2011, 4(11): 4620.
[9] Law Felix, Widenborg Per I, Luther Joachim, et al. Journal of Applied Physics, 2013, 113(19): 193511.
[10] Toukabri R, Shi Y. Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, 2013, 31(6): 061606.
[11] Czubatyj W, Hudgens S J. Electronic Materials Letters, 2012, 8(2): 157.
[12] Raghunath P, Lin M C. The Journal of Physical Chemistry A, 2013, 117(42): 10811.
[13] YIN Guanchao, GAO Feng, YUAN Wenhui, et al. Journal of The Chinese Ceramic Society, 2011, 39(4): 568.
[14] Lee K S, Lee S H, Woo S P, et al. Thin Solid Films, 2014, 564: 58.
[15] JIANG Li-hua, ZENG Xiang-bin, ZHANG Xiao(姜礼华，曾祥斌，张 笑). Acta Physica Sinica(物理学报), 2012, 61(1): 016803.
[16] Wu Maoyang, Li Wei, Qiu Yijiao, et al. Science China Technological Sciences, 2011, 54(9): 2310.
[17] Spinelli P, Ferry V E, van de Groep J, et al. Journal of Optics, 2012, 14(2): 024002.
[18] Senouci D, Baghdad R, Belfedal A, et al. Thin Solid Films, 2012, 522: 186.
[19] Xu L, Li Z P, Wen C, et al. Journal of Applied Physics, 2011, 110(6): 064315.
[20] Anutgan M, Anutgan T, Atilgan I, et al. Applied Physics A, 2012, 109(1): 197. |
|
|
|
