| 光谱学与光谱分析 |
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| Optical Properties Investigation of p-Type ZnO Film Based on Doping by Diffusion |
| CHEN Fang1, FANG Dan1*, WANG Shuang-peng2*, FANG Xuan1, TANG Ji-long1, ZHAO Hai-feng2, FANG Fang1, 3, CHU Xue-ying1, LI Jin-hua1, WANG Fei1, WANG Xiao-hua1, LIU Guo-jun1，MA Xiao-hui1, WEI Zhi-peng1 |
1. National Key Laboratory of High-Power Semiconductor Lasers, School of Photoelectric Engineering Changchun University of Science and Technology, Changchun 130022, China
2. National Key Laboratory of Optical and Application, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130033, China
3. Nanchang University, Nanchang 330047, China |
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Abstract The main purpose of this paper is to investigate the optical properties of p-type ZnO film based on P doping. ZnO film was grown by Atomic layer deposition (ALD) on InP subsrate in this experiment, and phosphorus diffused into ZnO lattice by annealing treatment at different temperature (500, 700 ℃). The optical properties of samples were investigated by photoluminescence (PL) spectroscopy, which indicated that the annealing temperature is the important factor influencing the phosphorus diffusion doping. The low-temperature PL spectra of the sample which annealed at 700 ℃ for 1 h exhibited acceptor related emission peaks located at 3.351, 3.311, 3.246 and 3.177 eV, which were attributed to A°X, FA, DAP and DAP-1LO, respectively. The acceptor binding energy is estimated to be about 122 meV, which is agreed with the theoretic values in phosphorus-doped ZnO films. In this paper, through thermal diffusion method to realize the p-type doped ZnO thin films, it solved the main problems which limited the development of ZnO based optoelectronic devices, and has an important significance for the development of the ZnO semiconductor materials and ZnO based photoelectric device.
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Received: 2014-11-24
Accepted: 2015-02-05
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Corresponding Authors:
FANG Dan, WANG Shuang-peng
E-mail: fangdan19822011@163.com;wsp0510@163.com
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