| 光谱学与光谱分析 |
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| The Deposition of Elements in the Process of Laser Ablation of Silicon |
| WANG Shao-peng1, FENG Guo-ying1, DUAN Tao2, HAN Jing-hua1* |
1. College of Electronics & Information Engineering, Sichuan University, Chengdu 610064, China
2. Laboratory for Extreme Conditions Matter Properties, Southwest University of Science and Technology, Mianyang 621010, China |
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Abstract Laser processing in the semiconductor industry (especially silicon material) has broad application prospects. The interaction between the laser and silicon is complex, and the present paper mainly studied the silicon morphology in UV laser ablation and the influence law of ambient gas. Studies have shown that the laser plasma ionization effect of silicon in the UV laser ablation has a decisive impact: the removal of the material becomes possible because of generating gasification and ionization, laser plasma shock wave can make phase transition material discharge effectively, and laser plasma spectroscopy ionization effect can make the oxygen elements in the air ionize and deposit effectively.
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Received: 2012-09-25
Accepted: 2012-12-28
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Corresponding Authors:
HAN Jing-hua
E-mail: hjh_scu@163.com
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