光谱学与光谱分析 |
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A New Non-Contact Method Based on Relative Spectral Intensity for Determining Junction Temperature of LED |
QIU Xi-zhen, ZHANG Fang-hui* |
School of Electric and Information Engineering, Shaanxi University of Science and Technology, Xi’an 710021, China |
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Abstract The high-power white LED was prepared based on the high thermal conductivity aluminum, blue chips and YAG phosphor. By studying the spectral of different junction temperature, we found that the radiation spectrum of white LED has a minimum at 485 nm. The radiation intensity at this wavelength and the junction temperature show a good linear relationship. The LED junction temperature was measured based on the formula of relative spectral intensity and junction temperature. The result measured by radiation intensity method was compared with the forward voltage method and spectral method. The experiment results reveal that the junction temperature measured by this method was no more than 2 ℃ compared with the forward voltage method. It maintains the accuracy of the forward voltage method and overcomes the small spectral shift of spectral method, which brings the shortcoming on the results. It also had the advantages of practical, efficient and intuitive, noncontact measurement, and non-destruction to the lamp structure.
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Received: 2012-06-05
Accepted: 2012-09-18
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Corresponding Authors:
ZHANG Fang-hui
E-mail: zhangfanghui@sust.edc.cn
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