光谱学与光谱分析 |
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Photoemission Characteristic of Transmission-Mode Extended Blue GaAs Photocathodes |
SHI Feng1, 2, 3, ZHAO Jing1, CHENG Hong-chang2, 3, ZHANG Yi-jun1, XIONG Ya-juan1, CHANG Ben-kang1* |
1. Institute of Electronic Engineering and Optoelectronic Technology, Nanjing University of Science and Technology, Nanjing 210094, China 2. North Night Vision Technology Group Co., Ltd., Xi’an 710065, China 3. Science and Technology on Low-Light-Level Night Vision Laboratory, Xi’an 710065, China |
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Abstract Based on the theoretical models of computing the photocathode optical performance, quantum yield and integral sensitivity, the photoemission characteristics of the domestic and ITT’s transmission-mode extended blue GaAs photocathodes, namely the cathode optical properties and performance parameters, were respectively investigated. The compared results show that the integral sensitivity of the domestic transmission-mode extended blue photocathode has achieved 2 100 μA·lm-1, still falling behind the ITT’s integral sensitivity of 2 750 μA·lm-1. The reasons for the difference in quantum yield curves are that, on one hand, the thickness of GaAlAs window-layer and the Al mole fraction play a critical role in the short-wavelength response, especially in the extended blue region. On the other hand, the cathode performance parameters such as electron diffusion length and back interface recombination velocity work on the long-wavelength and short-wavelength response. All these factors are subject to the backwardness of basic industrial manufacturing level.
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Received: 2010-09-25
Accepted: 2010-12-29
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Corresponding Authors:
CHANG Ben-kang
E-mail: bkchang@mail.njust.edu.cn
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