Si基CeO2/Tb4O7超晶格薄膜发光特性的研究

doi:10.3964/j.issn.1000-0593(2011)08-2067-04

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Abstract CeO₂/Tb₄O₇ superlattices were deposited on P type Si wafers by e-beam evaporation technology. Four typical photoluminescence peaks of Tb³⁺ ions which located around 488, 544, 588 and 623 nm were obtained after the superlattices annealing in weak reducing atmosphere at high temperature. It was indicated that CeO₂ films transferred to amorphous state as the valence transition of Ce⁴⁺→Ce³⁺ which was induced by thermal annealing, the energy transfer occurred between Ce³⁺ ions and Tb³⁺ ions, and the Tb³⁺ ions emition could be detected after obtaining the energy from Ce³⁺ ions. A study about the effect of Tb₄O₇ thickness on the superlattices photoluminescence showed that the maximum PL intensity as thickness of Tb₄O₇ films were about 0.5 nm, the concentration quenching might occur because of the energy transfer among the Tb³⁺ ions. The annealing conditions research demonstrated that the maximum PL intensity could be obtained as the superlattices annealed at 1 200 ℃ for 2 hour. Further investigation inferred that the concentration of Ce³⁺ ions，Oxygen vacancy defects and the distance between Ce³⁺ ions and Tb³⁺ ions play an important role in the annealing process.

Key words： Superlattices Photoluminescence Energy transfer Concentration quenching

Received: 2010-09-08 Accepted: 2010-12-25

ZTFLH:

O472+.3

Corresponding Authors: YI Li-xin E-mail: lxyi@bjtu.edu.cn

Cite this article:

WANG Shen-wei,YI Li-xin,DING Jia-cheng, et al. A Study of Photoluminescence Properties of Si-Based CeO₂/Tb₄O₇ Superlattices [J]. SPECTROSCOPY AND SPECTRAL ANALYSIS, 2011, 31(08): 2067-2070.

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http://www.gpxygpfx.com/EN/10.3964/j.issn.1000-0593(2011)08-2067-04 OR http://www.gpxygpfx.com/EN/Y2011/V31/I08/2067

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