| 光谱学与光谱分析 |
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| GaN-Based White-Light-Emitting Diodes with Low Color Temperature and High Color Rendering Index |
| WANG Feng1, HUANG Xiao-hui1, WANG Huai-bing1*, LIU Jian-ping1, FAN Ya-ming1，ZHU Yun-zhi2, JIN Zheng2 |
1. Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou 215125, China
2. Suzhou Jointec Co., Ltd., Suzhou 215125, China |
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Abstract The luminescence properties of high color rendering white LED depending on the proportions of mixed phosphor powders were investigated by adopting green and red phosphors stimulated by a 440 nm InGaN/GaN based blue LED. The results show that when the proportion of A/B type silica gels and green/red phosphor powders is 0.5∶0.5∶0.2∶0.03, two luminance bands are stimulated and their wavelength peaks are 535 and 643 nm, respectively. The minimum color temperature can reach 3 251 K, while the color rendering is as high as 88.8. Compared with the traditional white LED fabricated by yellow YAG-phosphors-coated high efficiency 460 nm blue LED, the color temperature is lower and the color rendering index can be increased by almost 26%.
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Received: 2010-09-15
Accepted: 2010-12-05
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Corresponding Authors:
WANG Huai-bing
E-mail: hbwang2006@sinano.ac.cn
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