| 光谱学与光谱分析 |
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| Performance Dependence of Organic Light-Emitting Devices on the Thickness of Alq3 Emitting Layer |
| LIAN Jia-rong，LIAO Qiao-sheng，YANG Rui-bo，ZHENG Wei，ZENG Peng-ju |
| Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education, Shenzhen University, Shenzhen 518060, China |
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Abstract The dependence of opto-electronical characteristics in organic light-emitting devices on the thickness of Alq3 emitter layer was studied, where MoO3, NPB, and Alq3 were used as hole injector, hole transporter, and emitter/electron transporter, respectively. By increasing the thickness of Alq3 layer from 20 to 100 nm, the device current decreased gradually, and the EL spectra of devices performed a little red shift with an obvious broadening in long wavelength range but a little decrease in intensity of short wavelength range. The authors simulated the EL spectra using the photoluminescence (PL) spectra of Alq3 as Alq3 intrinsic emission, which coincided with the experimental EL spectra well. The simulated results suggested that the effect of interference takes the major role in broadening the long wavelength range of EL spectra, and the distribution of emission zone largely affects the profile of EL spectra in short wavelength range.
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Received: 2009-12-01
Accepted: 2010-03-06
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Corresponding Authors:
LIAN Jia-rong
E-mail: ljr@szu.edu.cn
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