| 光谱学与光谱分析 |
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| Electrical and Optical Phase Transition Properties of Nano Vanadium Dioxide Thin Films |
| LIANG Ji-ran1, 4, HU Ming1, WANG Xiao-dong2, LI Gui-ke3, KAN Qiang4, JI An2, YANG Fu-hua2, LIU Jian3, WU Nan-jian3, CHEN Hong-da4 |
1. College of Electronic Science and Technology, School of Electronic and Information Engineering, Tianjin University, Tianjin 300072, China
2. Engineering Research Center for Semiconductor Integrated Technology, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
3. State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
4. State Key Lab on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China |
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Abstract Nano-vanadium dioxide thin films were prepared through thermal annealing vanadium oxide thin films deposited by dual ion beam sputtering. The nano-vanadium dioxide thin films changed its state from semiconductor phase to metal phase through heating by homemade system. Four point probe method and Fourier transform infrared spectrum technology were employed to measure and anaylze the electrical and optical semiconductor-to-metal phase transition properties of nano-vanadium dioxide thin films, respectively. The results show that there is an obvious discrepancy between the semiconductor-to-metal phase transition properties of electrical and optical phase transition. The nano-vanadium dioxide thin films’ phase transiton temperature defined by electrical phase transiton property is 63 ℃, higher than that defined by optical phase transiton property at 5 μm, 60 ℃; and the temperature width of electrical phase transition duration is also wider than that of optical phase transiton duration. The semiconductor-to-metal phase transiton temperature defined by optical properties increases with increasing wavelength in the region of infrared wave band, and the occuring temperature of phase transiton from semiconductor to metal also increases with wavelength increasing, but the duration temperature width of transition decreases with wavelength increasing. The phase transition properties of nano-vanadium dioxide thin film has obvious relationship with wavelength in infrared wave band.The phase transition properties can be tuned through wavelength in infrared wave band, and the semiconductor-to-metal phase transition properties of nano vanadiium dioxide thin films can be better characterized by electrical property.
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Received: 2009-04-20
Accepted: 2009-07-18
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Corresponding Authors:
LIANG Ji-ran
E-mail: liang_jiran@tju.edu.cn
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