| 光谱学与光谱分析 |
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| Investigation of the Layers Doped with Rare Earth Elements in Si Substrate and It’s Key Problems |
| CHENG Guo-an |
| Key Laboratory in University for Radiation Beam Technology and Materials Modification, Dept. of Materials Science & Engineering, Institute of Low Energy Nuclear Physics, Beijing Normal University; Beijing Radiation Center, Beijing 100875, China |
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Abstract The photoluminescence properties of rare earth doped silicon were investigated with ion beam technique. The photoluminescence spectra in the layers doped with ions of La, Ce and Nd were obtained at room temperature. At the same time, the up-conversion luminescence in the doped layers was observed. The intensities of both the luminescence and the up-conversion luminescence increased with increasing the doping dose and the treatment temperature. However, the intensities of the luminescence decreased with increasing the exciting wavelength between 220 nm and 300 nm; the intensities of the up-conversion luminescence increased with increasing the exciting wavelength between 600 nm and 800 nm. It was indicated that the luminescence and the up-conversion luminescence in the layers doped with ions of La, Ce and Nd depended on the doping dose, the heat treatment temperature and the exciting wavelength.
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Received: 2003-09-17
Accepted: 2004-01-25
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Corresponding Authors:
CHENG Guo-an
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| Cite this article: |
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CHENG Guo-an. Investigation of the Layers Doped with Rare Earth Elements in Si Substrate and It’s Key Problems[J]. SPECTROSCOPY AND SPECTRAL ANALYSIS, 2005, 25(03): 351-355.
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| URL: |
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https://www.gpxygpfx.com/EN/Y2005/V25/I03/351 |
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