| 光谱学与光谱分析 |
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| Study on the Adsorption Behavior of Ga, In and Tl on Nanometer-Size Titanium Dioxide by ICP-AES |
| HANG Yi-ping1，2, QIN Yong-chao1*, JIANG Zu-cheng1, HU Bin1 |
1.Wuhan University, College of Chemistry and Molecular Science, Wuhan 430072, China
2.Department of Applied Chemistry, Huanan University of Science and Technology, Guangzhou 510640, China |
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Abstract The adsorption behavior of nanometer TiO2 towards Gallium (Ga) Indium (In) and Thallium (Tl) was investigated with inductively coupled plasma atomic emission spectrometry (ICP-AES).The optimum conditions for adsorption were studied in detail, and the test included sorption kinetics, effect of pH on adsorption ratio, enrichment factor, and adsorption capacity.Under the optimum conditions, Ga(Ⅲ) , In(Ⅲ) and Tl(Ⅰ) ions could be adsorbed and recovered quantitatively.The static adsorption capacities of Ga(Ⅲ), In(Ⅲ) and Tl(Ⅰ) on nanometer TiO2 were 48.6, 46.6 and 23.4 mg·g-1 respectively.For the elution of Ga(Ⅲ), In(Ⅲ) and Tl(Ⅰ), a mixture of 0.1 mol·L-1 EDTA solution and 1.0 mol·L-1 HNO3 was used, and the recovery ratio was above 92%.According to the definition of IUPAC, the detection limits (3σ) of this method for Ga, In and Tl with an enrichment factor of 12.5 are 3.0, 6.0 and 13 ng·mL-1, respectively; and relative standard deviations (RSD) are 1.85%, 1.96% and 3.4%, respectively (n=6).The proposed method has been applied successfully to the analysis of geological samples with satisfactory results.
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Received: 2003-12-22
Accepted: 2004-05-28
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Corresponding Authors:
HANG Yi-ping
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| Cite this article: |
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HANG Yi-ping,QIN Yong-chao,JIANG Zu-cheng, et al. Study on the Adsorption Behavior of Ga, In and Tl on Nanometer-Size Titanium Dioxide by ICP-AES [J]. SPECTROSCOPY AND SPECTRAL ANALYSIS, 2005, 25(07): 1131-1134.
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| URL: |
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https://www.gpxygpfx.com/EN/Y2005/V25/I07/1131 |
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