| 光谱学与光谱分析 |
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| Analysis of Spectral Performance of Varied-Doping GaAs Photocathodes |
| NIU Jun1, 2, QIAO Jian-liang1, 2, CHANG Ben-kang1*, YANG Zhi1, ZHANG Yi-jun1 |
1. Institute of Electronic Engineering and Optoelectronic Technology, Nanjing University of Science and Technology, Nanjing 210094, China
2. Department of Electronic and Electrical Engineering, Nanyang Institute of Technology, Nanyang 473004, China |
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Abstract For a quantitative analysis of the effect of varied doping structure on the quantum efficiency of cathode, two kinds of reflective gradient doping GaAs photocathode samples were designed and grown respectively. After activation, the dynamic spectral response curves of the two samples were obtained. The spectral response curves were transformed into quantum efficiency curves. The quantum efficiency curves in different wavebands were fit，and the varied doping coefficient K that reflects the contribution of the varied doping structure to the cathode quantum efficiency was obtained. Results show that, the functional effects of the same material varied doping structure responding to the incident photon of different wavebands are different from each other. The same is true for the different material varied doping structures responding to the same waveband incident photon. The fundamental reasons for these differences are that the positions and the intensities of the inside electric fields which build within the materials under different varied doping structures are different from each other. It offers an effective analysis means to evaluate the structure performance of cathodes grown under different doping ways, and has great value for the study on optimization design of cathode varied doping structure.
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Received: 2008-08-10
Accepted: 2008-11-20
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Corresponding Authors:
CHANG Ben-kang
E-mail: nyistnj@163.com,nyistnj@yahoo.cn
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