| 光谱学与光谱分析 |
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| Studies on a New Type Structure OELD with Interinserting Interface |
| ZHANG Zhi-qiang1, HAO Yu-ying1*, MENG Wei-xin1, FAN Wen-hao1, WANG Hua2, XU Bing-she2 |
1. Department of Physics for College of Science, Taiyuan University of Technology, Taiyuan 030024, China
2. Key Laboratory of Interface Science and Engineering in Advanced Materials of Taiyuan University of Technology, Taiyuan 030024, China |
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Abstract A new type organic electroluminescent device with interinserting interface was fabricated. The basic structure of the device is ITO/NPB/Alq3/Al. By tailor-made template, the two interinserting interfaces were fabricated with NPB/Alq3 and Alq3/Al, respectively. The charge distribution on the interface and the electric field distribution in the organic layer were changed by introducing interinserting interfaces, thus the electron injection was improved, and the balance of the number of the electrons and holes at the interface was obtained. Therefore, the formation probability of exciton was enhanced and the leakage current was reduced. Compared to the traditional two-layer structure devices, the interinserting structure device has lower turn-on voltage and higher luminous efficiency. The driving-voltage of the interinserting structure OELD decreased while the brightness increased with the increase in the number of the interinsertion. As the current density increased, all the devices with interinserting interface showed high optical-electrical stability. The turn-on voltage of the device e is 3 V, and was made using the three slots template. At the current density of 54 mA·cm-2, the device e gets its maximum efficiency, which is 34% higher than the traditional structure device a.
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Received: 2008-11-29
Accepted: 2009-03-03
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Corresponding Authors:
HAO Yu-ying
E-mail: haoyuyinghyy@sina.com
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