|
|
|
|
|
|
Investigation of Carrier Recombination Dynamics of Light-Emitting Diode Based on InGaN Quantum Dots |
CAO Jie-hua1, 2, TIAN Ming1, 2, LIN Tao1, 2*, FENG Zhe-chuan1, 2 |
1. College of Physical Science and Engineering Technology, Guangxi University, Nanning 530004, China
2. Center on Nanoenergy Research, Guangxi University, Nanning 530004, China |
|
|
Abstract InGaN semiconductor materials are widely used In a new generation of optoelectronic devices because of their adjustable bandgap width by changing In components. However,the green LED still has a “green gap” problem to be solved. In this paper, the carrier recombination mechanism is studied in depth to provide a new idea for solving a “green gap”. The photoluminescence spectrum (PL) and time-resolved photoluminescence spectrum (TRPL) were used for investigating the carrier recombination processes of InGaN quantum dots (QDs) LED devices with different photon energies at temperatures. The transient photoluminescence properties of InGaN QDs and the transient life of radiative/nonradiative recombination were obtained. In the temperature range from 15 to 300 K, the peak value of the steady-state photoluminescence spectrum has its first blue shift and then red shift (s-shaped). The blue shift of the emission peak is about 4.2 meV, reaching its maximum value at 60 K, followed by the red shift of the emission peak, forming an s-shaped change with temperature. This change indicates that carrier localization behavior in QDs structure, and exciton recombination is the main reason for green light emission of InGaN QDs. By fitting the normalized PL integral intensity at different temperatures, the activation energy Eact was about 204.07 meV, with high activation energy, which proved that the InGaN QDs have strong carrier limiting effect and can better suppress the transitions to the nonradiative recombination centers. The internal quantum efficiency was estimated at 35.1%. Free carrier in the InGaN QDs composite average composite life τrad=73.85 ns. The energy boundary value Eme=2.34 eV is much higher than the local depth E0=62.55 meV, and it can be seen that the energy level is completely lower than the mobility edge, so the decay of InGaN QDs life is attributed to carrier local state recombination. In this study, the improved spectral data analysis method was used to study the fluorescence device based on the new structure of embedded QDs, and meaningful conclusions were obtained. It provides a reference for further understanding of the internal luminescence mechanism of InGaN quantum dots and the development of a new generation of lighting devices, indicating that the introduction of InGaN quantum dots plays a good role in promoting the development of photoelectric devices.
|
Received: 2019-08-09
Accepted: 2019-12-06
|
|
Corresponding Authors:
LIN Tao
E-mail: taolin@gxu.edu.cn
|
|
[1] Wen Pengyan, Zhang Shuming, Liu Jianping, et al. Journal of Applied Physics, 2016, 119(21): 213107.
[2] Li D, Sun X, Song H, et al. Advanced Materials, 2012, 24(6): 845.
[3] Zhang M, Banerjee A, Bhattacharya P. Journal of Crystal Growth, 2011, 323(1): 470.
[4] Wu Y R, Lin Y Y, Huang H H, et al. Journal of Applied Physics, 2009, 105(1): 013117.
[5] LI Yu-feng, HAN Pei-de, CHEN Zhen, et al(李昱峰, 韩培德, 陈 振,等). Chinese Journal of Luminescence(发光学报),2003, 24(4): 380.
[6] Li Z C, Liu J P, Feng M X, et al. Journal of Applied Physics, 2013, 114(9): 093105.
[7] Liu H, Lin T, Wan L, et al. Materials Research Express, 2018, 5(8): 086201.
[8] Lin T, Kuo H C, Jiang X D, et al. Nanoscale Research Letters, 2017, 12(1): 137.
[9] Cho Y H, Lee S K, Kwack H S, et al. Applied Physics Letters, 2003, 83(13): 2578.
[10] Yang F, Wilkinson M, Austin E J, et al. Physical Review Letters, 1993, 70(3): 323.
[11] Minsky M S, Watanabe S, Yamada N. Journal of Applied Physics, 2002, 91(8): 5176.
[12] Chichibu S F, Onuma T, Sota T, et al. Journal of Applied Physics, 2003, 93(4): 2051. |
[1] |
WANG Qian1,2, LI Peng2, DAI Kang2, SHEN Yi-fan2* . Collisional Energy Transfer for K(6S)+H2→K(4D)+H2 [J]. SPECTROSCOPY AND SPECTRAL ANALYSIS, 2009, 29(09): 2305-2308. |
[2] |
YANG Li-jun1, LI Ping1*, GAO Yan-jun1, LI Hui-feng1, WU Da-cheng2, LI Rui-xia2 . Time Resolved UV-Vis Absorption Spectra of Quercetin Reacting with Various Concentrations of Sodium Hydroxide[J]. SPECTROSCOPY AND SPECTRAL ANALYSIS, 2009, 29(06): 1632-1635. |
[3] |
WANG Xiao-fang1, 2, XIE Ping-bo2, ZHAO Fu-li1*, WANG He-zhou1 . Time Resolved Photoluminescence of ZnO Nanoparticles under Low Photon Energy Excitation[J]. SPECTROSCOPY AND SPECTRAL ANALYSIS, 2009, 29(05): 1160-1163. |
[4] |
HUANG Qing-ju1,FANG Er-ti2. Effects of Ambient Gas Pressure on Excitation Radiation Mechanism in Pulsed Laser Ablation of Copper [J]. SPECTROSCOPY AND SPECTRAL ANALYSIS, 2009, 29(03): 585-588. |
[5] |
HUANG Qing-ju. Radiation Properties of Plasma Produced by Ultraviolet Laser Ablation of Metal Cu[J]. SPECTROSCOPY AND SPECTRAL ANALYSIS, 2008, 28(02): 278-281. |
[6] |
LI Hui-feng1,LI Ping1*,LI Ying1,YANG Xiao-zhan2,WU Da-cheng2,LI Rui-xia2. Time Resolved UV-Vis Absorption Spectra in Synthetic Process of Quercetin Complex with Al3+[J]. SPECTROSCOPY AND SPECTRAL ANALYSIS, 2008, 28(02): 352-355. |
[7] |
ZHANG Liang-liang1,2,ZHANG Cun-lin2,ZHAO Yue-jin1,LIU Xiao-hua1. Time-Resolved Terahertz Spectroscopy of Explosives[J]. SPECTROSCOPY AND SPECTRAL ANALYSIS, 2007, 27(08): 1457-1460. |
[8] |
SHI Zhi-gang, HUANG Shi-hua*,LIANG Chun-jun,LEI Quan-sheng. A New Measurement Method of Time-Resolved Spectrum[J]. SPECTROSCOPY AND SPECTRAL ANALYSIS, 2007, 27(02): 217-219. |
[9] |
CHENG Juan1, 2,HE Ying-hong1,ZUO Hao-yi1,YANG Jing-guo1* . Measurement of Time-Dependent Spectra Excited by Pulse Laser Using Multi-Fiber Delayer and Optical Multi-Channel Analyzer [J]. SPECTROSCOPY AND SPECTRAL ANALYSIS, 2006, 26(04): 593-596. |
[10] |
SONG Yi-zhong1, 2,HE An-zhi1 . Doppler Effect on Width of Characteristic Line in Plasma Induced by Pulsed Laser Ablating Al [J]. SPECTROSCOPY AND SPECTRAL ANALYSIS, 2005, 25(05): 655-659. |
[11] |
CHENG Juan1, HE Ying-hong1, ZUO Hao-yi1, RAN Rui-jiang1, XUE Kang1, YANG Jing-guo1*,TAN Hua2, HU Shao-lou2, WANG Xiao-song2 . Investigations of Transient Time-Dependent Spectral Multi-Channel Measurement for Shocked KCl Crystal [J]. SPECTROSCOPY AND SPECTRAL ANALYSIS, 2004, 24(12): 1499-1501. |
[12] |
GUO Zhou-yi,TIAN Zhen,JIA Ya-li . Spectroscopic Evaluation of Time-Resolved Fluoroimmunoassay [J]. SPECTROSCOPY AND SPECTRAL ANALYSIS, 2004, 24(05): 596-599. |
|
|
|
|