加入收藏  设为首页
 
Home | 中文  
   Home   |   About Journal   |   Editorial Board   |   Instruction   |   Rewarded   |   Indexed-in   |   Impect Factor   |   Subscriptions   |   Contacts Us
SPECTROSCOPY AND SPECTRAL ANALYSIS  2018, Vol. 38 Issue (01): 82-86    DOI: 10.3964/j.issn.1000-0593(2018)01-0082-05
|
Raman and IR Study on Silicon Films at Transition Regime
FAN Shan-shan1,2, GUO Qiang3, YANG Yan-bin3, CONG Ri-dong3, YU Wei3, FU Guang-sheng1,3
1. School of Electronic and Information Engineering, Hebei University of Technology, Tianjin 300400, China
2. School of Science, Hebei University of Technology, Tianjin 300400, China
3. College of Physics Science and Technology, Hebei University, Key Laboratory of Photo-Electricity Information Materials of Hebei Province, Baoding 071002, China