| 光谱学与光谱分析 |
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| Efficient Polymer Solar Cells Using ZnO Electron Transporting Layer with Layered Magentron Sputtered ZnO Film and/or Modified with Functionalized Carbon Nanopartilces |
| ZHOU Jian-ping1*, LI Xin-yu1, ZHU Feng2, CHEN Xiao-hong2*, XU Zheng3 |
1. School of Automation Engineering, Shanghai University of Electric Power, Shanghai 200090, China
2. Engineering Research Center for Nanophotonics and Advanced Instrument, Ministry of Education, School of Physics and Materials Science, East China Normal University, Shanghai 200062, China
3. Key Laboratory of Luminescence and Optical Information of Ministry of Education, Beijing Jiaotong University, Beijing 100044, China |
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Abstract Polymer solar cells (PSCs) with ZnO electron transporting layer has been widely studied because ZnO has superior electron transport capability and high light transmittivity. However, lots of defects existed in ZnO film fabricated with sol-gel method and vacuum sputtering deposition can greatly increase carrier recombination at the ZnO interface. Therefore, it is important to enhance the performance of PSCs to inhibit defects and improve contact quality of ZnO interface. The regioregular poly(3-hexylthiophene) (P3HT) and 6,6-phenyl C61-butyric acid methylester (PCBM) based inverted PSCs with ZnO electron transporting layer have been developed by using layered magnetron sputtered ZnO and/or ionic liquid functionalized carbon nanopartilces (ILCNs) modification. The power conversion efficiencies (PCEs) of PSCs with ZnO layer sputtered with Ar and Ar/O2 gas are 2.2% and 2.8%, respectively. PSCs modified with ILCNs or layered sputtered ZnO can respectively reach 3.4% and 3.1%, and further up to 3.8% using layered sputtered ZnO and ILCNs integrated modification. PSCs using modified ZnO layer show the vanishment of negative capacitive behavior, lowering reverse dark current and better diode characteristics. The results indicated that using layered sputtered ZnO or ILCNs, or both integrated modification can efficiently inhibit the defects of ZnO interface and improve contact quality ZnO/P3HT∶PCBM interface. However, this integrated modification method is a more efficient strategy to enhance ZnO layer electron transporting and extraction capabilities, and further improve PCEs of PSCs.
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Received: 2016-01-25
Accepted: 2016-05-20
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Corresponding Authors:
ZHOU Jian-ping, CHEN Xiao-hong
E-mail: zhoujianping@shiep.edu.cn;xhchen@phy.ecnu.edu.cn
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