| 光谱学与光谱分析 |
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| The Latest Research Progress of Coupling between BiOX and Semiconductor Photocatalyst |
| CUI Yu-min, LI Hui-quan, MIAO Hui, TAO Dong-liang, FAN Su-hua |
| College of Chemistry and Materials Engineering, Fuyang Teacher’s College, Anhui Provincial Key Laboratory for Degradation and Monitoring of Pollution of the Environment, Fuyang 236037, China |
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Abstract The heterojunction was formed between two kinds of coupling semiconductors , which improved the charge separation efficiency of system, widened the spectral response range of catalysts and improved photocatalytic propertirs of catalysts. The process of preparation of semiconductors coupling was easily affected by preparation methods and reaction temperature and so on, which would cause the changes in crystal structure and surface properties of coupling semiconductors, thus photocatalytic quantum efficiency of coupling semiconductors was increased. In this article, the following three aspects were mainly discussed. (1) About the coupled system of halogen bismuth oxide and oxide, because generaling BiOX with the semiconductor material compound, the efficient heterojunction structure could be formed, photocatalytic performances of the photocatalytic degradation of pollutants were improved. (2) About the coupled system of AgX and BiOX, compared with the pure AgI or BiOI, composite photocatalytic materials of AgI/BiOI had higher photocatalytic reactivity in visible light. (3) About the coupled system of halogen bismuth oxide and other compounds, after Bi2S3 coupled with BiOX, photoproduction electronic migrated in the two kinds of catalysts, the separation efficiency of electrons and holes was improved, and photocatalytic performances of coupling compound were improved. In addition, in recent years, the latest research progress of the preparation method, the influencing factors of the photocatalytic performance and improving the utilization efficiency of visible light of semiconductors coupling at home and abroad was reviewed in this paper. Finally, the main problems and the future striving direction in semiconductors coupling were presented.
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Received: 2015-02-09
Accepted: 2015-06-19
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Corresponding Authors:
CUI Yu-min
E-mail: cymlh@126.com
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