光谱学与光谱分析 |
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Study on the Modified Surface Layers of the CIGS Thin Films by Raman Spectra |
LIU Wei1,SUN Yun2,LI Feng-yan2,HE Qing2,LI Chang-jian2,TIAN Jian-guo1* |
1. Photonics Center, College of Physics, Nankai University, Tianjin 300071, China 2. Tianjin Key Laboratory of Photo-electronic Thin Film Devices and Technology,Tianjin 300071, China |
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Abstract In the present paper, the properties of Cu(In1-xGax)Se2 (CIGS) thin film absorber materials for the solar cells obtained by selenization of the precursors with In-rich or CuGa-rich surface layers were studied by XRD, SEM and Raman spectra. The photovoltaic devices based on the absorbers were measured and analyzed by illuminated J-V curve subsequently. The performance of the device constructed by the absorbers obtained by selenization of the precursors with CuGa-rich surface layer was improved greatly compared to that with In-rich surface layer. Through Raman spectra measurement, it was found that the Raman peak of the A1 mode was shifted for the CuGa-rich one, which is verified that the band gap of the surface layers was elevated. Moreover the value of increased Ga contents within the surface region of films were calculated by the relation between the Raman shifts and the Ga contents. As a result, the devices based on the thin films with the elevated surface energy band by selenizing the precursors with the CuGa-rich surface layer improved further the Voc and FF by about 74 mV and 8% respectively compared to that of corresponding to the one with In-rich surface layers, so that the conversion efficiency of the photovoltaic devices based on these thin films with CuGa-rich surface layer was improved by up to 9.4%. Meanwhile Raman scattering spectroscopy has proven to be a very powerful and useful technique for the surface analysis of such thin film solar cell semiconducuor materials.
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Received: 2006-07-10
Accepted: 2006-10-20
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Corresponding Authors:
TIAN Jian-guo
E-mail: jjtian@nankai.edu.cn
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Cite this article: |
LIU Wei,SUN Yun,LI Feng-yan, et al. Study on the Modified Surface Layers of the CIGS Thin Films by Raman Spectra[J]. SPECTROSCOPY AND SPECTRAL ANALYSIS, 2007, 27(04): 716-719.
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URL: |
https://www.gpxygpfx.com/EN/Y2007/V27/I04/716 |
[1] Dullwebera T, Hannaa G, Shams-Kolahia W, Thin Solid Films, 2000,361:478. [2] Romeo A, Terheggen M, Abou-Ras D, et al. Prog. Photovolt: Res. Appl. 2004,12:93. [3] Gloeckler M, Sites J R. Journal of Physics and Chemistry of Solids, 2005,66:1891. [4] Dullweber T, Hanna G, Rau U, et al. Solar Energy Materials & Solar Cells, 2001, 67: 145. [5] LUO Zhi-xun, FANG Yan(骆智训,方 炎). Spectroscopy and Spectral Analysis(光谱学与光谱分析),2006,26(2):358. [6] Satoshi Yamanaka,Masayuki Tanda,Nobuyuki Nakada,et al. Jpn. J. Appl. Phys., 1991, 30: 442. [7] Ahmed E, Tomlinson R D, Pilkington R D, et al. Thin Solid Films, 1998, 335: 54. [8] Zaretskaya E P, Gremenok VF, Riede V, et al. Journal of Physics and Chemistry of Solids, 2003, 64: 1989. [9] Hisashi Miyazaki, Rui Mikami, Akira Yamada, et al. Journal of Physics and Chemistry of Solids, 2003, 64: 2055. [10] Roy S, Guha P, Kundu S N, et al. Mat. Chem. Phys., 2002, 73: 24. [11] Wei S H, Zhang S B, Zunger A. Appl. Phys. Lett.,1998,72:3199. [12] Dullweber T, Hanna G, Rau U, et al. Sol. Eng. Mat. Sol., 2001,67(cells), 145. |
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