Ce掺杂Si纳米线的制备及其蓝光发射特性

doi:10.3964/j.issn.1000-0593(2018)01-0281-04

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Abstract Si nanowires were prepared from the Si (100) single with polishing and “pyramid” texture surface. The process conditionswere as follows: the growth temperature was 1 100 ℃, N₂ gas flow rate 1 500 sccm, growth time 15~60 min, and Au and Au-Al were used metal catalyst, respectively. The diameters of the formed Si nanowires are 50~200 nm and the length were from several micrometers to sereral tens of micrometers. Then, Ce-doped Si nanowires were prepared under the temperature of 1 100~1 200 ℃, 1 000 sccm of N₂ flow rate, 30~60 min of doping time and CeO₂ powder as doping agent. The influences of the different length, density and distribution of Si nanowires on the luminescence of Ce³⁺ were experimentally investigated. The photoluminescence properties and fluorescence quantum efficiency were test ed and analyzed by the Hitachi F-4600 fluorescence spectrophotometer and the FLS-920 full functional fluorescence spectrometer under room temperature. The results showed that the Ce-doped Si nanowires had a stronly blue luminescencent with an emission peak position at 405 nm(5d→²F_5/2) and the full width at half maximum was 36.7 nm when the grow time of Si nanowires was 30min, the surface was “pyramid” texturewith lower density and the optimized excitation wavelength was 328 nm.Compared with the silicon substrate,the Ce-doped Si nanowires appeared strong blue light emission. The fluorescence quantum efficiency reached 65.57%. The color coordinates of Ce-doped Si nanowires was (0.16, 0.16) based on the distribution of emission spectral and CIE-1931 standard formula. Ce-doped Si nanowires have potential applications in the areas of lighting and display because of its strong luminous intensity and relatively high fluorescence quantum efficiency. At the same time this paper has a certain referential value in the field of research and application of Si nanowires.

Key words：Si nanowires；Ce doped；Photoluminescence

Received: 2016-06-01 Accepted: 2016-06-01

ZTFLH:

O614.3

Corresponding Authors: MA Lei E-mail: malei@hbu.edu.cn

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https://www.gpxygpfx.com/EN/10.3964/j.issn.1000-0593(2018)01-0281-04 OR https://www.gpxygpfx.com/EN/Y2018/V38/I01/281