光谱学与光谱分析 |
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Preparation and Properties of P-Type Cd1-xZnxTe Thin Films |
ZHAO Yu, JIANG Hong-chao, WU Li-li*, FENG Liang-huan, ZENG Guang-gen, WANG Wen-wu, ZHANG Jing-quan, LI Wei |
College of Materials Science and Engineering, Sichuan University, Chengdu 610064, China |
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Abstract Cd1-xZnxTe∶Cu Thin films were prepared by co-evaporation method. X-ray Fluorescence Spectrometry (XRF), scanning electron microscope(SEM), UV-Vis transmission spectra, thermal probe, four-probe method, step profiler and X-ray diffractometer (XRD) were used to investigate the composition, structure, morphology, optical and electrical properties of Cd1-xZnxTe∶Cu thin films with different doping concentration. The results show that the resistivity of 10% copper doped Cd1-xZnxTe films increased several magnitude and the conductive type changed from p-type to n-type after annealing. The 20% cu-doped Cd1-xZnxTe films had not obvious change in conductive type and electrical resistivity after annealing and they exhibit good surface morphology. The transmissivity of 30% cu-doped Cd1-xZnxTe films decreased seriously below 10% after annealing, which indicate that they are not suitable to be the top cell materials in tandem structure. The 20% and 30% cu-doped Cd1-xZnxTe films were both p-type conductivity.
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Received: 2012-06-25
Accepted: 2012-09-18
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Corresponding Authors:
WU Li-li
E-mail: wulily77@163.com
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