光谱学与光谱分析 |
|
|
|
|
|
Electroluminescence from a Mn2+ Activated SiO2∶Si Film on n+-Si Substrate |
WEN Jie, CHEN Ting, RAN Guang-zhao* |
School of Physics, State Key Laboratory for Mesoscopic Physics,Peking University, Beijing 100871, China |
|
|
Abstract Recently, a monolithic integration of optics and electronics in a single Si chip has attracted a great deal of attention due to its attractive application prospects: the potential for forming high speeded information processing and transmission, and inexpensive and low power silicon chip. Developing high-efficiency silicon-based light sources is the main task in silicon photonics. In the present paper the authors explore a potential way for silicon-based light-emitting application. A Mn2+-activated silicon-rich silicon oxide (SiO2∶Si∶Mn2+) film was prepared on the n+-type silicon substrate using co-sputtering technique followed by doping and activation of Mn with a thermal diffusion method. High-resolution transmission electronic microscope study shows that the film is embedded with 3-5 nm silicon nanocrystals. Bright green photoluminescence (PL) from the film was observed under ultraviolet radiation and peaked at 524 nm (2.36 eV), the decay time of which is 0.8 ms. It is generally believed that the green radiation originates from 4T1→6A1 transition in Mn2+. The PL excitation spectrum of the film, monitored at 524 nm, has a peak of 254 nm, similar to that of the Zn2SiO4∶Mn film. It is believed that the strong 254 nm absorption is attributed to Mn2+→Mn3+ ionization or d5→d4s transition. A very broad electroluminescence spectrum ranging from 400 to 800 nm, covering almost the whole visible band, was observed from the device made of the SiO2∶Si∶Mn2+ film at low reverse biases. The threshold voltage of the device is as low as 5 V. Spectra of the device demonstrate that the electroluminescence is attributed to Mn2+ and luminescence centers in the Si-rich SiO2 film. The authors interpret that Mn2+ excitation is mainly due to direct impact excitation of hot electrons, silicon nanocrystals in the SiO2 film help electrons tunnel from a silicon nanocrystal to an adjacent one, and are advantageous for generating hot electrons to excite Mn2+.
|
Received: 2008-05-16
Accepted: 2008-08-18
|
|
Corresponding Authors:
RAN Guang-zhao
E-mail: rangz@pku.edu.cn
|
|
[1] Rong H, Liu A, Jones R, et al. Nature, 2005, 433: 292. [2] Pavesi L, Lockwood D J. Silicon Photonics, New York: Springer, 2004. [3] Wu C L, Wang J C, Chan M H, et al. Appl. Phys. Lett., 2003, 83: 4530. [4] Semond F, Damilano B, Ve’Zian S, et al. Appl. Phys. Lett., 1999, 75; 82. [5] Pavesi L, Negro L D, Mazzoleni C, et al. Nature, 2000, 408: 440. [6] Lockwood D J, Lu Z H, Baribeau J M. Phys. Rev. Lett., 1996, 76: 539. [7] Fujii M, Yoshida M, Kanzawa Y, et al. Appl. Phys. Lett., 1997, 71: 1198. [8] Kik P G, Brongersma M L, Polman A. Appl. Phys. Lett., 2000, 76: 2325. [9] Han H S, Seo S Y, Shin J H. Appl. Phys. Lett., 2001, 79: 4568. [10] Blasse G, Grabmaier B C. Luminescent Materials, Berlin: Springer-Verlag, 1994. [11] Joo Han Kim, Paul H Holloway. Appl. Phys. Lett., 2004, 84: 2070. [12] Lee Y E, Norton D P, Budai J D. Appl. Phys. Lett., 1999, 74: 3155. [13] Cich M, Kim K, Choi H, et al. Appl. Phys. Lett., 1998, 73: 2116. [14] Ouyang X, Kitai A H, Xiao T. J. Appl. Phys., 1996, 79: 3229. [15] Kavanagh Y, Alam M J, Cameron D C. Thin Solid Films, 2004, 447: 85. [16] Miyata T, Minami T, Saikai K, et al. J. Lumin., 1994, 60-61: 926. [17] Tamatani M, in: Shoinoya S, Yen W M(Eds.). Phosphor Handbook, CRC Press, Boca Raton, FL, 1999. 73. [18] Nazarov A, Sun J M, Skorupa W, et al. Appl. Phys. Lett., 2005, 86: 151914. [19] Yu Jiaqi, Liu Huimin, Wang Yanyun, et al. J. Lumin., 1998, 79: 191. [20] Sun K, Xu W J, Zhang B, et al. Nanotechnology, 2008, 19: 105708. [21] Irrera A, Pacifici D, Miritello M, et al. Appl. Phys. Lett., 2002, 81: 1866. [22] Izeddin I, Moskalenko A S, Yassievich I N, et al. Phys. Rev. Lett., 2006, 97: 207401. [23] Joo Han Kim, Paul H Holloway. Appl. Phys. Lett., 2004, 84: 2070. |
[1] |
QIN Li-mei, Andy Hsitien Shen*. Photoluminescence Spectral Characteristics of Jet From Fushun, Liaoning Province[J]. SPECTROSCOPY AND SPECTRAL ANALYSIS, 2023, 43(10): 3180-3185. |
[2] |
TAO Long-feng1, 2, LIU Chang-jiang2, LIU Shu-hong3, SHI Miao2, HAN Xiu-li1*. Preparation and Spectral Characteristics of Mn2+ Doped Nephrite Tailings Glass[J]. SPECTROSCOPY AND SPECTRAL ANALYSIS, 2023, 43(09): 2710-2714. |
[3] |
ZHU Hong-wei1, CHENG You-fa1, CHEN Shu-xiang2*, FAN Chun-li1, LI Ting1, LIU Hai-bin1, ZHAO Xiao-xue1SHAN Guang-qi1, LI Jian-jun1. Spectroscopic Characteristics of a Natural Diamond Suspected of Synthetic Diamond[J]. SPECTROSCOPY AND SPECTRAL ANALYSIS, 2023, 43(06): 1690-1696. |
[4] |
YAN Xue-jun1, ZHOU Yang2, HU Dan-jing1, YU Dan-yan1, YU Si-yi1, YAN Jun1*. Application of UV-VIS Diffuse Reflectance Spectrum, Raman and
Photoluminescence Spectrum Technology in Nondestructive
Testing of Yellow Pearl[J]. SPECTROSCOPY AND SPECTRAL ANALYSIS, 2023, 43(06): 1703-1710. |
[5] |
LI Zhao, WANG Ya-nan, XU Yi-pu, CAO Jing, WANG Yong-feng, WU Kun-yao, DENG Lu. Synthesis and Photoluminescence of Blue-Emitting Phosphor
YVO4∶Tm3+ for White Light Emitting Diodes[J]. SPECTROSCOPY AND SPECTRAL ANALYSIS, 2023, 43(02): 623-628. |
[6] |
LIAO Yi-min1, YAN Yin-zhou1, WANG Qiang2*, YANG Li-xue3, PAN Yong-man1, XING Cheng1, JIANG Yi-jian1, 2. Laser-Induced Growth Device and Optical Properties of ZnO
Microcrystals[J]. SPECTROSCOPY AND SPECTRAL ANALYSIS, 2022, 42(10): 3000-3005. |
[7] |
WANG Tao1, 2, LIU Jian-xun2, GE Xiao-tian2, WANG Rong-xin2, SUN Qian2, NING Ji-qiang2*, ZHENG Chang-cheng3*. Fine Photoluminescence Spectroscopic Characterization of Interfacial Effects on Emission Properties of InGaN/GaN Multiple Quantum Wells in a Blue-Light Laser Diode Structure[J]. SPECTROSCOPY AND SPECTRAL ANALYSIS, 2022, 42(04): 1179-1185. |
[8] |
LI Zhao, WU Kun-yao, WANG Ya-nan, CAO Jing, WANG Yong-feng, LU Yuan-yuan. Synthesis and Luminescence Properties of Yellow-Emitting Phosphor Y2.93Al5O12∶0.07Ce3+ Under Blue Light Excitation[J]. SPECTROSCOPY AND SPECTRAL ANALYSIS, 2022, 42(02): 381-385. |
[9] |
CHEN Cai-yun-fei, LI Li-ping*. The Application of Photoluminescence Spectra on Identification of Different Types of Pearls[J]. SPECTROSCOPY AND SPECTRAL ANALYSIS, 2022, 42(01): 20-25. |
[10] |
ZHAO Tong1, WANG Ya-mei1,2, LIU Ling1, LI Yan1,3*. Gemological and Spectral Characteristics of Mexican Red Blue Amber[J]. SPECTROSCOPY AND SPECTRAL ANALYSIS, 2021, 41(08): 2618-2625. |
[11] |
CHEN Yan-ping1, LUO De-li2*, HUANG Bin1, CHENG Hao1, TANG Xian-chen1, LI Qiang1, LEI Hong-bo1, CHEN Dan-ping3. Photoluminescence and Radioluminescence of Tb3+ Ion-Doped Lithium Aluminosilicate Glasses[J]. SPECTROSCOPY AND SPECTRAL ANALYSIS, 2021, 41(06): 1863-1868. |
[12] |
ZHAN Ying-fei, LIU Chun-guang*, WANG Ming-wei, YANG Jian, ZHU Han-cheng, YAN Duan-ting, XU Chang-shan, LIU Yu-xue. Preparation, Microstructure and Optical Properties of Cr3+ Single-Doped and Eu3+/Cr3+ Co-Doped GdAlO3 Near Infrared Long Persistent Luminescent Nanoparticles[J]. SPECTROSCOPY AND SPECTRAL ANALYSIS, 2021, 41(01): 80-87. |
[13] |
ZHAO Yuan, LÜ Zhao-yue*, DENG Jian, ZENG Guo-qing. The Emissive Mechanism of C545T Thin Layer at the Exciplex and Non-Exciplex Interfaces[J]. SPECTROSCOPY AND SPECTRAL ANALYSIS, 2020, 40(12): 3711-3715. |
[14] |
LIN Shun-hui,ZHANG Li-hui, LIU Yong-quan, WANG Xiao-kun, LIN Chun-lei, YU Yun-peng*. Thermal Annealing Effect on Photoluminescence of Y2O3∶Eu3+ Thin Films Prepared by Magnetron Sputtering[J]. SPECTROSCOPY AND SPECTRAL ANALYSIS, 2020, 40(11): 3336-3340. |
[15] |
YAN Jun1,2, SUN Qing2, YAN Xue-jun1, FANG Shi-bin1, SHENG Jia-wei2, ZHANG Jian2*. The Categories of the UV-Vis Reflectance Spectra of Seawater Cultured Black Pearl and Its Unique PL Spectral Characteristics[J]. SPECTROSCOPY AND SPECTRAL ANALYSIS, 2020, 40(09): 2781-2785. |
|
|
|
|