| 光谱学与光谱分析 |
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| Effect of Ce3+ Implantation on Photoluminescence Intensity of Si Nanocrystals Embedded in Superlattices |
| DU Yu-fan, YI Li-xin*, WANG Shen-wei, WU Yang |
| Key Laboratory of Luminescence and Optical Information，Ministry of Education，Institute of Optoelectronic Technology，Beijing Jiaotong University，Beijing 100044，China |
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Abstract In the present paper, SiO/SiO2 superlattices samples were prepared on Si substrates by electron beam evaporation．The samples were annealed in nitrogen atmosphere at high temperature subsequently．And then，Ce3+ ions with a dose of 2.0×1014 and 2.0×1015 cm-2 respectively were implanted into these samples with formed Si nanocrystals. The photoluminescence (PL) spectra showed that the PL intensities of samples with Ce3+ implanting dropped sharply compared with the samples without Ce3+ implanting. The PL intensity increased gradually with increasing re-annealing temperature, but dropped again when the temperature exceeded 600 ℃. The PL intensity even could be higher than that of samples without Ce3+ implanting if only the dose of Ce3+ was 2.0×1014 cm-2. When the dose of Ce3+ was 2.0×1015 cm-2, the PL intensity couldn’t exceed that of samples without Ce3+ implanting even when the re-annealing temperature was 600 ℃. Further investigations showed that the varieties of the PL intensities were mainly dependent on the re-annealing temperature, which had the best point at 600 ℃, and the dose of Ce3+ had the right value. Furthermore, the experiment results proved that there was energy transfer from Ce3+ to Si nanocrystals in this kind of structure.
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Received: 2008-10-10
Accepted: 2009-01-20
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Corresponding Authors:
YI Li-xin
E-mail: lxyi@bjtu.edu.cn
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