Abstract：High-voltage light-emitting diode has the characteristics of high working voltage, small drive current, high efficiency, high reliability and low energy consumption, which has been widely studied and applied. This paper first introduces the basic principle of high-voltage LED, classification and structure; Then, the latest research progress of the key fabrication technology of high-voltage LED is described, from the point of optimizing the photoelectric characteristics of the devices; The reliability of high-voltage LED are discussed from the aspect of failure mechanism and thermal characteristics as well; Finally, its development and application prospects are prospected.
Key words：High-voltage LED; High-voltage AC LED; Process; Reliability
王嘉露，郭伟玲，李松宇，杨 新，孙 捷. 高压LED芯片的研究进展[J]. 光谱学与光谱分析, 2018, 38(08): 2325-2331.
WANG Jia-lu, GUO Wei-ling, LI Song-yu, YANG Xin, SUN Jie. Research Progress of High-Voltage LED Chip. SPECTROSCOPY AND SPECTRAL ANALYSIS, 2018, 38(08): 2325-2331.
[1] HUANG En-li, WANG Ying-nan, NI Xu-xiang(黄恩立，王英男，倪旭翔). Optoelectronics·Laser(光电子·激光)，2010，21(4): 508.
[2] BAI Sheng-mao, WANG Jing, MIAO Hong-li(白生茂，王 晶，苗洪利). Optoelectronics·Laser(光电子·激光)，2010，21(9): 1298.
[3] CAO Dong-xing, GUO Zhi-you, LIANG Fu-bo，et al(曹东兴，郭志友，梁伏波, 等). Acta Physica Sinica(物理学报)，2012，61(13): 511.
[4] HONG Jian-ming, LI Xiao-yun(洪建明, 李晓云). Research of High Voltage Series Light-Emitting Diode Chip. SSLSS(全国半导体光源系统学术年会)，2011.
[5] Jin-Pin A. J. Phys. Conf. Ser., 2011, 276: 012001.
[6] CHEN Ying-liang, Lü Yi-jun, GAO Yu-lin，et al(陈莹亮，吕毅军，高玉琳，等). Acta Optica Sinica(光学学报)，2010，30(12)：3586.
[7] YAN Chong-guang(颜重光). Electronics Quality(电子质量), 2009，9：25.
[8] Guo W L, Yan W W, Zhu Y X，et al. Chinese Physics B, 2012, 21(12): 440.
[9] Chang S J, Chang C S, Su Y K, et al. IEEE Trans. Adv. Packag., 2005，28(2)：273.
[10] Chitnis A, Sun J, Mandavilli V, et al. Applied Physics Letters, 2002, 81(18): 3491.
[11] Lee C E, Kuo H C, Lee Y C, et al. Shaping Structure, 2008, 20(3): 184.
[12] Chang S J, Chen W S, Shei S C, et al. IEEE Transactions on Advanced Packaging, 2007, 30(4): 752.
[13] Shchekin O B, Epler J E, Trottier T A, et al. Applied Physics Letters, 2006, 89(7): L2112.
[14] ZHANG Teng, ZHANG Yang, LI Jing, et al(詹 腾，张 扬，李 璟，等). Journal of Semiconductors, 2013, 34(9)：094010.
[15] Ding Y. Information Optoelectronics, Nanofabrication and Testing. Optical Society of America, 2012.
[16] Tsai M L, Lai K Y. Applied Physics Express, 2014, 7(2): 343.
[17] Mak G Y, Lam E Y, Choi H W. Journal of Vacuum Science & Technology B Microelectronics & Nanometer Structures, 2011, 29(1): 011025.
[18] Lee H K, Yu J S. Semiconductor Science & Technology, 2011, 26(9): 095006.
[19] Horng R H, Shen K C, Kuo Y W, et al. Ecs Solid State Letters, 2012, 1(5): R21.
[20] Zhou S J, Zheng C J, Lv J J, et al. Applied Surface Science, 2016, 366: 299.
[21] So S J, Park C B. Thin Solid Films, 2008, 516(8): 2031.
[22] Tien C H, Chen K Y, Hsu C P, et al. Opt. Express, 2014，22(Suppl. 6)：A1462.
[23] Chiang Y C，Lin B C, Chen K J, et al. Int. J. Photoenergy, 2014, 8：1.
[24] Takei S, Shinjo T, Sakaida Y, et al. Jpn. J. Appl. Phys., 2007，46(11)：7273.
[25] Cristina R, Gerard K, Sherif S, et al. The International Society for Optical Engineering, 2001, 4557: 49.
[26] Chen Q, Huang C, Wang Z. Microelectron. Rel., 2012, 52(11): 2670.
[27] Li S, Lam K T, Huang W C, et al. J. Display Technol., 2015，11(4)：374.
[28] Park S H, Kim Y S, Kim T H, et al. Journal of Nanoscience & Nanotechnology, 2016, 16(2): 1765
[29] Zou X B, Cai Y F, Chong W C, et al. Journal of Display Technology, 2016, 12(4): 397.
[30] WANG Yan-ming，HE Peng，MIAO Zhen-lin, et al(汪延明, 何 鹏, 苗振林, 等). China Illuminating Engineering Journal(照明工程学报), 2017, 28(1): 30.
[31] Chang S J, Chang C Y, Tseng C L, et al. IEEE Photonics Technology Letters, 2014, 26(11): 1073.
[32] Ao J P, Sato H, Mizobuchi T, et al. Physical Status Solid, 2002, 194(2): 376.
[33] Onushkin G A, Lee Y J, Yang J J，et al. IEEE Photonics Technology Letters，2009，21(1): 33.
[34] Zhu Y, Xu C, Liang T, et al. Applied Physics Letters, 2006, 89(8): 1506.
[35] Wang H S, Shim J A. IEEE Transactions on Electron Devices, 2008, 55(5): 1123.
[36] Tao Y B, Wang S Y, Chen Z Z, et al. Physica Status Solidi, 2012, 9(3-4): 616.
[37] Cao B, Li S, Hu R, et al. Optics Express, 2013, 21(21): 25381.
[38] Hwu F S, Sung T H, Chen C H, et al. IEEE Photonics Journal, 2013, 5(2): 6600515.
[39] Chiang Y C, Lin B C, Chen K J, et al. International Journal of Photoenergy, 2014, (8): 1.
[40] Hwu F S, Sung T H, Chen C H, et al. IEEE Photonics Journal, 2013, 5(2): 6600515.
[41] Cai Y, Zou X, Chong W C, et al. Physics Status Solidi, 2016, 213(5): 1199.
[42] Grigory A Onushkin, Lee Young-Jin, Yang Jung-Ja，et al. IEEE Photon. Technol. Lett., 2009, 21(1): 33.
[43] Wang C H, Lin D W, Lee C Y, et al. IEEE Electron Device Letters, 2011, 32(8): 1098.
[44] Yen H H, Kuo H C, Yeh W Y. IEEE Photon. Technol. Lett., 2010，22(15)：1168.
[45] Meneghini M, Tazzoli A, Ranzato E, et al. Reliability Physics Symposium. IEEE Xplore, 2010. 522.
[46] HAN Yu, GUO Wei-ling, FAN Xing, et al(韩 禹, 郭伟玲, 樊 星，等). Acta Photonica Sinica(光子学报), 2014, 43(8): 43.
[47] Zhang J H, Wu B Q, Shih T M, et al. Applied Physics Letters, 2013, 103(15): 1999.
[48] Tsai M Y, Tang C Y, Yen C Y, et al. IEEE Transactions on Device & Materials Reliability, 2014, 14(1): 161.
[49] Wei T, Qiu X, Lo J C C, et al. Microsystems, Packaging, Assembly and Circuits Technology Conference，IEEE, 2015. 54.
