1. 云南师范大学可再生能源材料先进技术与制备教育部重点实验室，云南 昆明 650092 2. 四川文理学院物理与机电工程学院, 四川 达州 635000 3. Department of Physics and Astronomy, University of Toledo, Toledo OH 43606, USA
The Influence of Deposition Pressure on the Properties of Hydrogenated Amorphous Silicon Thin Films
YUAN Jun-bao1, YANG Wen1, CHEN Xiao-bo1, 2, YANG Pei-zhi1*, SONG Zhao-ning3
1. Key Laboratory of Education Ministry for Advance Technique and Preparation of Renewable Energy Materials, Yunnan Normal University, Kunming 650092, China 2. School of Physics and Mech-tronic Engineering, Sichuan University of Arts and Science, Dazhou 635000, China 3. Department of Physics and Astronomy, University of Toledo, Toledo OH 43606, USA
Abstract：Hydrogenated amorphous silicon (a-Si∶H) thin films on soda-lime glass substrates were deposited by plasma enhanced chemical vapor deposition (PECVD) using disilane and hydrogen as source gases. To study the influence of deposition pressure on the deposition rate, optical band gap and structure factor, a surface profilometer, an ultraviolet-visible spectrometer, a Fourier transform infrared (FTIR) spectrometer and a scanning electron microscopy (SEM) were used to characterize the deposited thin films. It is found that the deposition rate firstly increased and then decreased and the optical band gap monotonically decreased with the increasing deposition pressure. Moreover, the formation of SiH bond was preferable to the formation of SH2 or SiH3 bond when the deposition pressure was less than 210 Pa, while it was opposite when the deposition pressure is higher than 210 Pa. Finally, the deposition pressure in the range of 110～210 Pa was found to be more suitable for the preparation of high quality a-Si∶H thin films.
Key words：PECVD;Deposition pressure;Deposition rate;Optical band gap;Structure factor
袁俊宝1，杨 雯1，陈小波1，2，杨培志1*，宋肇宁3 . 沉积压力对氢化非晶硅薄膜特性的影响 [J]. 光谱学与光谱分析, 2016, 36(02): 326-330.
YUAN Jun-bao1, YANG Wen1, CHEN Xiao-bo1, 2, YANG Pei-zhi1*, SONG Zhao-ning3 . The Influence of Deposition Pressure on the Properties of Hydrogenated Amorphous Silicon Thin Films . SPECTROSCOPY AND SPECTRAL ANALYSIS, 2016, 36(02): 326-330.
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