Preparation of MgxZn1-xO /Au/MgxZn1-xO Multilayer Transparent Conductive Film and Studies of Its Photoelectric Properties
Lü Shan-shan1, FANG Xuan1*，WANG Jia-qi1, FANG Fang1，ZHAO Hai-feng2, CHU Xue-ying1, LI Jin-hua1， FANG Dan1, TANG Ji-long1, WEI Zhi-peng1, MA Xiao-hui1, WANG Xiao-hua1*, PU Shuang-shuang1, XU Li1
1. State Key Laboratory of High Power Semiconductor Laser, School of Science, Changchun University of Science and Technology，Changchun 130022, China 2. Key Laboratory of Excited State Process, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Science, Changchun 130033, China
Abstract：In the present paper, MgxZn1-xO and MgxZn1-xO/Au/MgxZn1-xO multilayer structures of transparent conductive film were prepared by the simple operation of sol-gel and RF magnetron sputtering method on quartz substrate respectively and then they were annealed. The surface, electrical, crystal and optical properties of the films at different annealing temperature were determined by UV-Vis spectrophotometer, X-ray diffraction, photoluminescence and Hall effect, respectively. The influence of annealing temperature on the films was also investigated. The testing results indicated that the films with good c-axis orientation presented hexagonal wurtzite structure. With increasing Mg components, the optical band gap of ZnO thin film increased gradually. There was an obvious blue shift phenomenon in PL spectrum and absorption spectrum line. But the electrical properties of the films declined. In MgxZn1-xO/Au/MgxZn1-xO multilayer structure of thin film samples, the existence of Au interlining led to the poor optical properties of thin film, and the light transmittance in the ultraviolet region was 60%. Compared with MgxZn1-xO film, the electrical properties of MgxZn1-xO/Au/MgxZn1-xO multilayer structure of transparent conductive film were improved, the resistivity and migration rate were significantly increased. In addition, high temperature annealing treatment could effectively improve the crystal quality of thin film and further improve the electrical characteristics of the samples. After the annealing treatment at 500 ℃, migration rate of the film reached to 40.9 cm2·Vs-1 while the resistivity was 0.005 7 Ω·cm. Due to the rising of temperature, the crystal size increased from 25.1 to 32.4 nm to reduce the mobility of the film. Therefore, MgxZn1-xO/Au/MgxZn1-xO multilayer structure of transparent conductive film played an important role in promoting the ZnO transparent conductive film application in deep ultraviolet devices.
Key words：Sol-gel;MgxZn1-xO/Au/MgxZn1-xO;Annealing temperature
[1] Dong X, Wang H, Wang J, et al. Applied Mechanics and Materials, 2012, 130: 1192. [2] LIU Kai, ZHAO Xiao-ru, ZHAO Liang, et al(刘 凯, 赵小如, 赵 亮, 等). J. Synth. Cryst.(人工晶体学报)，2009, 38: 585. [3] Zhang F L, Gadisa A, Inganas O, et al. Appl. Phys. Lett., 2004, 84：3906. [4] Li Y, Meng J. Mater Lett., 2014, 117: 260. [5] Luna-Arredondo E J, Maldonado A, Asomoza R, et al. Thin Solid Films, 2005, 490: 132. [6] Huang K, Tang Z, Zhang L, et al. Appl. Surf, Sci., 2012, 258: 3710. [7] Euvananont C, Pakdeesathaporn S, Pratoomwan P, et al. Journal of Microscopy Society of Thailand, 2008，22：26. [8] Kim G H, Du Ahn B, Shin H S, et al. Appl. Phys. Lett., 2009, 94: 233501. [9] Tsay C Y, Wu C W, Lei C M, et al. Thin Solid Films, 2010, 519(5): 1516. [10] Kim H K, Yi M S, Lee S N. Thin Solid Films, 2009, 517: 4039. [11] Tsay C Y, Cheng H C, Tung Y T, et al. Thin Solid Films, 2008, 517(3): 1032. [12] Jeong J A, Park Y S, Kim H K. J. Appl. Phys., 2010, 107: 023111. [13] HUANG Kai, Lü Jian-guo，LIU Xian-song，et al(黄 凯, 吕建国, 刘先松, 等). J. Synth. Cryst.(人工晶体学报), 2010, 39: 1171. [14] Cimpoiasu A, Van Der Pers N M, de Keyser T H, et al. Smart Materials and Structures, 1996, 5: 744. [15] Lin L Y, Kim D E. Thin Solid Films, 2009, 517: 1690. [16] LI Ya-ling, LI Wen-bo, LI Mi-shan, et al(李亚玲, 李文博, 李宓善, 等). College Physics(大学物理), 2005, 24: 30. [17] Peng L P, Fang L, Yang X F, et al. J. Alloy Compd., 2009, 484: 575. [18] Cao L, Zhu L, Jiang J, et al. J. Alloy Compd., 2012, 516: 157. [19] Liu K W, Tang Y D, Cong C X, et al. Appl. Phys. Lett., 2009, 94: 151102. [20] Xu L, Li X, Chen Y, et al. Appl. Surf. Sci., 2011, 257: 4031. [21] WU Xiao-li, CHEN Chang-le, HAN Li-an, et al(吴小丽, 陈长乐, 韩立安, 等). Acta Physica Sinica(物理学报), 2008, 57: 3735. [22] Girtan M, Folcher G. Surface and Coatings Technology, 2003, 172: 242. [23] ZHANG Shi-kai, ZHANG Bao-lin, SHI Zhi-feng, et al(张仕凯, 张宝林, 史志锋). Chin. J. Lumin.(发光学报), 2012, 33: 934.
