Effects of Annealing Temperature on the Structure and Optical Properties of ZnMgO Films Prepared by Atom Layer Deposition
SUN Dong-xiao1, LI Jin-hua1*, FANG Xuan1, 2, CHEN Xin-ying1, FANG Fang1, CHU Xue-ying1, WEI Zhi-peng1, 2, WANG Xiao-hua1
1. School of Science, Changchun University of Science and Technology, Changchun 130022, China 2. International Joint Research Center for Nanophotonics and Biophotonics, Changchun 130022, China
Abstract：In the present paper, we report the research on the effects of annealing temperature on the crystal quality and optical properties of ZnMgO films deposited by atom layer deposition(ALD). ZnMgO films were prepared on quartz substrates by ALD and then some of the samples were treated in air ambient at different annealing temperature. The effects of annealing temperature on the crystal quality and optical properties of ZnMgO films were characterized by X-ray diffraction (XRD), photoluminescence (PL) and ultraviolet-visible (UV-Vis) absorption spectra. The XRD results showed that the crystal quality of ZnMgO films was significantly improved when the annealing temperature was 600 ℃，meanwhile the intensity of(100)diffraction peak was the strongest. Combination of PL and UV-Vis absorption measurements showed that it can strongly promote the Mg content increasing in ZnMgO films and increase the band gap of films. So the results illustrate that suitable annealing temperature can effectively improve the crystal quality and optical properties of ZnMgO films.
Key words：Atom layer deposition;ZnMgO films;Annealing temperature
孙冬晓1，李金华1*，方 铉1, 2，陈新影1，方 芳1，楚学影1，魏志鹏1, 2，王晓华1 . 退火温度对原子层沉积法制备ZnMgO薄膜结构和光学性能的影响 [J]. 光谱学与光谱分析, 2014, 34(07): 1789-1792.
SUN Dong-xiao1, LI Jin-hua1*, FANG Xuan1, 2, CHEN Xin-ying1, FANG Fang1, CHU Xue-ying1, WEI Zhi-peng1, 2, WANG Xiao-hua1. Effects of Annealing Temperature on the Structure and Optical Properties of ZnMgO Films Prepared by Atom Layer Deposition . SPECTROSCOPY AND SPECTRAL ANALYSIS, 2014, 34(07): 1789-1792.
[1] Li Chaoyang, Wang Dapeng, Li Zeming, et al. Journal of Materials, 2013, 2013: 547271. [2] Campos L C, Guimaraes M H D, Goncalves A M B, et al. AIP Advances, 2013, 022104: 2. [3] Kin C K, Lim Kim J M, Choi H, et al. Journal of Power Sources, 2013, 232: 159. [4] Zhao Minggang, Wang Xinchang, Ning Lingling, et al. Journal of Alloys and Compounds, 2010, 507: 97. [5] Chen Xiaohang, Kang Junyong. Semicond. Sci. Technol, 2008, 23: 025008. [6] Ju Z G, Shan C X, Yang C L, et al. Appl. Phys. Lett., 2009, 94: 101902. [7] Choi C H, Kim S H. Journal of Crystal Growth, 2005, 283: 170. [8] WANG Yong-jie(王勇杰). University of Jinan(济南大学), 2012. [9] Hou Qiongqiong, Meng Fanjie, Sun Jiaming. Nanoscale Research Letters, 2013, 8: 144. [10] Fang Dongyu, Li Chaoling, Wang Nan, et al. Crystal Research and Technology, 2013, 48(5), 265. [11] Li Xueyong, Cui Liling, Yan Qinyun. Journal of Hunan University of Technology, 2011, 5: 23. [12] Singh A, Kumar D, Khanna P K, et al. Thin Solid Films, 2011, 519: 5826. [13] Wang Y G, Lau S P, Lee H W, et al. Appl. Phys., 2003, 94: 354. [14] Shin Y H, Kim Y. Journal of the Korean Physical Society, 2012, 61: 594. [15] Wei X Q, Zhang Z G, Liu M, et al. Materials Chemistry and Physics, 2007, 101: 285. [16] Christian F, Marcel G, Markus H, et al. Materials Science, 2013, 1494: 5.
