Study on Packaging-Induced Stress in 4 mm Cavity Length High-Power Single Emitter Semiconductor Laser
ZHANG Yong1, YANG Rui-xia1*, AN Zhen-feng2, LIU Xiao-wen2, XU Hui-wu2
1. College of Information Engineering, Hebei University of Technology, Tianjin 300130, China 2. The 13th Research Institute of China Electronics Technology Croup Corporation, Shijiazhuang 050051, China
Abstract：To reduce packaging-induced stress of long cavity length high-power single emitter semiconductor laser, the relationship between the stress and the wavelength shift was deduced on the basis of the theory that the stress can change the band gap. A method was developed for quantitatively calculating the stress by measuring the emission spectrum of the laser under pulse conditions. The results show that the soldering quality is a critical factor affecting thermal stress. The difference in stress can exceed 300 MPa due to the difference in soldering quality. By optimizing the reflowing soldering curve of the laser, the stress of the laser drops from 129.7 to 53.4 MPa. This method can also effectively solve the problem that the stress varies with storage time. This work demonstrates that the measurement and analysis of the emission spectrum of the laser can provide a useful method to study packaging stress of the high-power single emitter semiconductor laser. It is also an available means to evaluate and analyze soldering quality.
张 勇1，杨瑞霞1*，安振峰2，刘小文2，徐会武2 . 4 mm腔长高功率单管半导体激光器封装应力的研究 [J]. 光谱学与光谱分析, 2014, 34(06): 1441-1445.
ZHANG Yong1, YANG Rui-xia1*, AN Zhen-feng2, LIU Xiao-wen2, XU Hui-wu2 . Study on Packaging-Induced Stress in 4 mm Cavity Length High-Power Single Emitter Semiconductor Laser . SPECTROSCOPY AND SPECTRAL ANALYSIS, 2014, 34(06): 1441-1445.
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