Al替代对β-Ga2O3∶Cr3+结构与发光性能影响

doi:10.3964/j.issn.1000-0593(2013)11-2921-05

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摘要：高温固相法制备了(Ga1-xAl_x)₂O₃∶Cr³⁺(x=0，0.1，0.2，0.3，0.4，0.5)系列荧光粉。X射线衍射分析表明Al³⁺含量增加后，物相依然保持β-Ga₂O₃的相。此外随着Al离子含量的逐渐增加，高衍射角峰位向右移动表明Al离子进入了β-Ga₂O₃晶格中。激发光谱中258，300，410和550 nm左右的峰位分别对应基质Ga₂O₃的带与带的吸收跃迁、电荷迁移带跃迁、Cr³⁺的⁴A₂→⁴T₁以及⁴A₂→⁴T₂跃迁。随着Al离子掺杂量的增加，激发光谱峰位都呈现出不同程度的蓝移现象，这分别是由于基质的带隙能量、Cr³⁺与配体之间的电负性以及晶场强度增大所导致的。在发射光谱中，随着Al³⁺替代Ga³⁺，Cr³⁺的发光由宽带发射变为窄带发射，这是由于Al³⁺的掺入改变了Cr³⁺周围的晶场，从而Cr³⁺的红光发射由原来的⁴T₂→⁴A₂变为²E→⁴A₂跃迁发射。Al离子掺杂改善了样品的长余辉发光特性，并且Al离子含量达到0.5时显示出较长时间的肉眼可见的近红外余辉发射。热释发光曲线显示材料中具有合适的陷阱能级，这也是材料产生长余辉发光的原因。

关键词：β-Ga₂O₃;Cr³⁺;长余辉;近红外

Abstract：The Al doping gallate phosphor (Ga1-xAl_x)₂O₃∶Cr³⁺ (x=0, 0.1, 0.2, 0.3, 0.4, 0.5) was synthesized by a high temperature solid-state reaction method. The X-ray diffractions show that the phase of the phosphors remains to be Ga₂O₃ structure with increase in the contents of Al³⁺ ion. Beside, the fact that the X-ray diffraction peak shifts towards big angles with increasing Al³⁺ ions content shows that Al³⁺ ions entered the Ga₂O₃ lattice. The peaks of the excitation spectra located at 258, 300, 410 and 550 nm are attributed to the band to band transition of the matrix, charge transfer band transition, and ⁴A₂→⁴T₁ and ⁴A₂→⁴T₂ transition of Cr³⁺ ions, respectively. Those excitation spectrum peak positions show different degrees of blue shift with the increase in the Al³⁺ ions content. The blue shift of the first two peaks are due to the band gap energy of substrate and the electronegativity between Cr³⁺ ions and ligands increasing, respectively. The blue shift of the energy level transition of Cr³⁺ ion is attributed to crystal field strength increasing. The Cr³⁺ ion luminescence changes from a broadband emission to a narrowband emission with Al³⁺ doping, because the emission of Cr³⁺ ion changed from ⁴T₂→⁴A₂ to ²E→⁴A₂ transition with the crystal field change after Al³⁺ ions doping. The Al³⁺ ions doping improved the long afterglow luminescence properties of samples, and the sample showed a longer visible near infrared when Al³⁺ ions content reaches 0.5. The thermoluminescence curve shows the sample with suitable trap energy level, and this is also the cause of the long afterglow luminescence materials.

Key words：β-Ga₂O₃;Cr³⁺;Afterglow;Near-infrared

收稿日期: 2013-03-08 修订日期: 2013-06-15

中图分类号:

O482.3

通讯作者: 王银海 E-mail: yhwang@gdut.edu.cn

引用本文:

王显盛，万敏华，王银海^*，赵慧，胡正发，李海玲 . Al替代对β-Ga₂O₃∶Cr³⁺结构与发光性能影响 [J]. 光谱学与光谱分析, 2013, 33(11): 2921-2925.
WANG Xian-sheng, WAN Min-hua, WANG Yin-hai^*, ZHAO Hui, HU Zheng-fa, LI Hai-ling . Structure and Luminescence Properties of Ga₂O₃∶Cr³⁺ by Al Doping . SPECTROSCOPY AND SPECTRAL ANALYSIS, 2013, 33(11): 2921-2925.

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