Strain in GaN Epi-Layer Grown by Hydride Vapor Phase Epitaxy
LIU Zhan-hui1*, XIU Xiang-qian2, ZHANG Li-li2, ZHANG Rong2, ZHANG Ya-nan1, SU Jing1, XIE Zi-li2, LIU Bin2, SHAN Yun3
1. School of Physics and Optoelectronic Engineering, Nanjing University of Information Science & Technology, Nanjing 210044, China 2. Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Nanjing University, Nanjing 210093, China 3. School of Biochemical and Environmental Engineering, Nanjing Xiaozhuang University, Nanjing 211171, China
Abstract：In the present paper, strain in GaN epitaxial layer grown by hydride vapor phase epitaxy (HVPE) was investigated by means of high-resolution X-ray diffraction (HRXRD), Raman spectra and photoluminescence (PL) measurements. Both the biaxial in-plane and out-of-plane strains (of the order of ～10-4 and 10-4, respectively) and the hydrostatic strain component (of the order of ～10-5) were extracted from HRXRD measurements. These values agreed well with the ones computed from the blue-shift of E2 Raman mode and the near-band-edge PL peak. The results showed that strains in GaN layer were superposed by the biaxial strain and hydrostatic strain.
[1] Nakamura S, Senoh M, Iwasa N, et al. Jpn. J. Appl. Phys.，1995，34：L1332. [2] Zhang J P, Chitnis A, Adivarahan V, et al. Appl. Phys. Lett.，2002，81：4910. [3] Andre Y, Trassoudaine A, Tourret J, et al. J. Crystal Growth，2007，306：86. [4] Hiramatsu K, Detchprohm T，Akasaki I. Jpn. J. Appl. Phys., 1993, 32: 1528. [5] Gil B, Briot O, Aulombard R L. Phys. Rev. B，1995，52：R17028. [6] Chichibu S, Shikanai A, Azuhata T, et al. Appl. Phys. Lett.，1996，68：3766. [7] Hageman P R, Kirilyuk V, Corbeek W H M, et al. J. Crystal Growth，2003，255：241. [8] Darakchieva V, Monemar B，Usui A. Appl. Phys. Lett.，2007，91：031911. [9] LIU Zhan-hui, XIU Xiang-qian, ZHANG Rong, et al(刘战辉，修向前，张 荣，等). Semiconductor Technology(半导体技术)，2008，33(Supp.): 190. [10] Darakchieva V, Birch J, Schubert M, et al. Phys. Rev. B，2004，70：045411. [11] Kisielowski C, Kruger J, Ruvimov S, et al. Phys. Rev. B，1996，54：17745. [12] Polian A, Grimsdich M, Grzegory I. J. Appl. Phys.，1996，79：3343. [13] Eunsoon Oh, Lee S K, Park S S, et al. Appl. Phys. Lett.，2001，78：273. [14] Monemar B. J. Phys.: Condens. Matter.，2001，13：7011.
