Low Driving Voltage in Organic Light-Emitting Diodes with NPB/MoO3/NPB as a Hole Transport Layer
LIU Guo-qiang1, JI Wen-yu1, XIE Wen-fa2, ZHANG Han-zhuang1*
1. Department of Physics, Jilin University, Changchun 130023, China 2. State Key Laboratory on Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, Changchun 130021, China
Abstract：Driving voltage of organic light-emitting diodes (OLEDs) was lowered by applying (NPB/MoO3)x/NPB as a hole transport layer (HTL). (NPB/MoO3)x was multi-layer periodic (MLP) structure with x changed from 0 to 3. Compared with the conventional device with 0-periodic structure, the driving voltage of the device with 1-periodic structure was the lowest. This was due to charge transfer (CT) complex formation between NPB and MoO3. The driving voltage of tris(8-hydroxyquinoline) aluminum (Alq3)-based organic light-emitting devices (OLEDs) could be lowered by 0.8 V at 1 000 cd·m-2 by using multiple structure of NPB/MoO3/NPB.
刘国强1，纪文宇1，谢文法2，张汉壮1* . 利用NPB/MoO3/NPB作为空穴传输层的低驱动电压的有机发光器件 [J]. 光谱学与光谱分析, 2011, 31(04): 882-885.
LIU Guo-qiang1, JI Wen-yu1, XIE Wen-fa2, ZHANG Han-zhuang1* . Low Driving Voltage in Organic Light-Emitting Diodes with NPB/MoO3/NPB as a Hole Transport Layer . SPECTROSCOPY AND SPECTRAL ANALYSIS, 2011, 31(04): 882-885.
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