Abstract：Strained Si/SiGe heterostructure was prepared by high dose Ge ion implantation and a subsequent high temperature rapid thermal processing method. A 325 nm UV laser was used to analyze the Raman spectra of the strained Si cap layer. It was found that tensile strain in the Si cap layer can induce a shift toward lower frequency of the first order Raman scattering peak of 520 cm-1. In light of the variation of peak position, a lateral tensile stress of 12.5×108 N·m-2 in Si cap layer was worked out. However, the tensile strain in the Si cap layer can not lead to a variation of the sub-order Raman scattering peaks around 1 555 and 2 330 cm-1.
肖清华，屠海令. Si/SiGe异质结构的硅盖层中应变对Raman谱特征的影响[J]. 光谱学与光谱分析, 2005, 25(05): 719-722.
XIAO Qing-hua,TU Hai-ling. Influence of Strain in the Si Cap Layer of Si/SiGe Heterostructure on Its Raman Spectra . SPECTROSCOPY AND SPECTRAL ANALYSIS, 2005, 25(05): 719-722.
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