Effect of Ce3+ Implantation on Photoluminescence Intensity of Si Nanocrystals Embedded in Superlattices
DU Yu-fan, YI Li-xin*, WANG Shen-wei, WU Yang
Key Laboratory of Luminescence and Optical Information，Ministry of Education，Institute of Optoelectronic Technology，Beijing Jiaotong University，Beijing 100044，China
Abstract：In the present paper, SiO/SiO2 superlattices samples were prepared on Si substrates by electron beam evaporation．The samples were annealed in nitrogen atmosphere at high temperature subsequently．And then，Ce3+ ions with a dose of 2.0×1014 and 2.0×1015 cm-2 respectively were implanted into these samples with formed Si nanocrystals. The photoluminescence (PL) spectra showed that the PL intensities of samples with Ce3+ implanting dropped sharply compared with the samples without Ce3+ implanting. The PL intensity increased gradually with increasing re-annealing temperature, but dropped again when the temperature exceeded 600 ℃. The PL intensity even could be higher than that of samples without Ce3+ implanting if only the dose of Ce3+ was 2.0×1014 cm-2. When the dose of Ce3+ was 2.0×1015 cm-2, the PL intensity couldn’t exceed that of samples without Ce3+ implanting even when the re-annealing temperature was 600 ℃. Further investigations showed that the varieties of the PL intensities were mainly dependent on the re-annealing temperature, which had the best point at 600 ℃, and the dose of Ce3+ had the right value. Furthermore, the experiment results proved that there was energy transfer from Ce3+ to Si nanocrystals in this kind of structure.
杜玙璠1, 衣立新*,王申伟，邬洋 . Ce3+注入对超晶格中硅纳米晶光致发光强度的影响[J]. 光谱学与光谱分析, 2009, 29(06): 1486-1488.
DU Yu-fan, YI Li-xin*, WANG Shen-wei, WU Yang . Effect of Ce3+ Implantation on Photoluminescence Intensity of Si Nanocrystals Embedded in Superlattices. SPECTROSCOPY AND SPECTRAL ANALYSIS, 2009, 29(06): 1486-1488.
[1] Cullis A G, Canham L T. Nature, 1991, 353: 335. [2] Wu X L, Siu G G, Tong S, et a1. Appl. Phys. Lett., 2001, 78: 3058. [3] CHEN En-guang, YI Li-xin, WANG Shen-wei，et al(陈恩光，衣立新，王申伟，等). Spectroscopy and Spectral Analysis(光谱学与光谱分析)，2008, 28(2): 246. [4] Ovchinnikov V, Novikov S, Toivola T, et al. J. Microelectronics Journal, 2005, 36: 502. [5] FANG Ying-cui, XIE Zhi-qiang, ZHAO You-yuan, et al(方英翠，解志强，赵有源，等). Journal of Vacuum Science and Technology(真空科学与技术学报)，2005, 25(5): 335. [6] Serincan U, Aygun G, Turan R. J. Lumin., 2005, 113: 229. [7] Glover M, Meldrum A. Opt. Matter., 2005, 27: 977. [8] Wilkinson A R, Elliman R G. Appl. Phys. Lett., 2003, 83: 5512. [9] Yi L X, Heitmann J, Scholz R, et al. Appl. Phys. Lett., 2002, 81: 4248. [10] Yi L X, Heitmann J, Scholz R, et al. Appl. Phys. Lett., 2002, 81: 4248. [11] LIN Li-bin(林理彬). The Theory of Solid Irradiation Physics(辐射固体物理学导论). Sichuan: Sichun Science and Technology Press(四川: 四川科学技术出版社)，2004. [12] Endo M, Kenji T, Kobori K. Carbon, 1995, 33: 873.
