Study on In-Plane Optical Anisotropy of Semiconductor Materials by Reflectance Difference Spectroscopy
ZHAO Lei1, CHEN Yong-hai2, ZUO Yu-hua1, WANG Hai-ning3, SHI Wen-hua1
1. State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China 2. Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China 3. State Key Laboratory of Sensing Technique, Institute of Electronics, Chinese Academy of Sciences, Beijing 100080, China
Abstract：In the present review, the measuring principle of reflectance difference spectroscopy (RDS) is given. As a powerful tool in the surface and interface analysis technologies, the application of RDS to the research on semiconductor materials is summarized along with the origins of the in-plane optical anisotropy of semiconductors. And it is believed that RDS will play an important role in the electrooptic modification of Si-based semiconductor materials.
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