Study on Back Contact Layer of CdTe Solar Cell by XPS
YANG Fang1,ZHONG Yong-qiang2,ZHENG Jia-gui1*,FENG Liang-huan1, CAI Wei1,CAI Ya-ping1,ZHANG Jing-quan1,LI Bing1,LEI Zhi1,LI Wei1,WU Li-li1
1. College of Materials Science and Engineering, Sichuan University, Chengdu 610064, China 2. China Academy of Engineering Physics, Mianyang 621900, China
Abstract:ZnTe and ZnTe∶Cu polycrystalline films were fabricated by means of co-evaporating at room temperature. The sturcture and distribution of various elements were studied by XPS and XRD. The XRD results show that the phase structure of the films deposited at different substrate temperature almost remains unchanged, XPS analysis shows that the compositional dependence of sputtering time is different for the films deposited at different deposition rate. The distribution of Cu in the film grows with the increase in the sputtering time, and reaches a maximum, then falls down rapidly. According to the transformation of the distribution of Cu we excogitated how to prevent Cu diffusion in ZnTe films. Considering Cu as a function of time, ZnTe films were first deposited at the substrate temperature of 70 ℃, and then ZnTe∶Cu films were deposited at room temperature, effectively preventing the diffusion of Cu atom, and thus improving the efficiency of CdTe solar cells.
Key words:CdTe solar cells;XPS study;ZnTe/ZnTe∶Cu films
杨帆1,钟永强2,郑家贵1*,冯良桓1,蔡伟1,蔡亚平1, 张静全1,黎兵1,雷智1,李卫1,武莉莉1 . CdTe太阳电池背接触层的XPS研究[J]. 光谱学与光谱分析, 2009, 29(04): 904-907.
YANG Fang1,ZHONG Yong-qiang2,ZHENG Jia-gui1*,FENG Liang-huan1, CAI Wei1,CAI Ya-ping1,ZHANG Jing-quan1,LI Bing1,LEI Zhi1,LI Wei1,WU Li-li1 . Study on Back Contact Layer of CdTe Solar Cell by XPS. SPECTROSCOPY AND SPECTRAL ANALYSIS, 2009, 29(04): 904-907.
[1] ZHENG Jia-gui, ZHANG Jing-quan, CAI Wei(郑家贵,张静全,蔡 伟). Chinese Journal of Semiconductors(半导体学报),2001,22(2):171. [2] CAI Dao-lin, ZHENG Jia-gui,FENG Liang-huan(蔡道林,郑家贵,冯良桓). Material Science and Technology(材料科学与工艺), 2004, 12(5):479. [3] ZHANG Jing-quan,FENG Liang-huan,CAI Wei,et al. Thin Solid Films, 2002,414: 113. [4] Drioux D, Niles W, Hochst H. J. Appl. Phys., 1993, 73(12): 8381. [5] Gessert T A, Mason A R, et al. J. Electron. Mater., 1995, 24(10): 1443. [6] YAN Qiang, FENG Liang-huan, WU Li-li, et al(鄢 强,冯良桓,武莉莉,等). Chinese Journal of Semiconductors(半导体学报),2004,25(4):424. [7] Tang J, Mao D, Ohno T R, et al. IEEE Conf. Rec. 26th IEEEPVSC. New York: Proc, 1997. 439. [8] Dobson Kevin D. Visoly-Fisher Iris, Hodes Gary, et al. Solar Energy Materials﹠ Solar Cells, 2000, 62: 295. [9] ZHONG Yong-qiang, ZHENG Jia-gui, FENG Liang-huan(钟永强,郑家贵,冯良桓). Spectroscopy and Spectral Analysis(光谱学与光谱分析), 2007, 27(3): 598. [10] Wang Wenwu, Xia Gengpei, ZHENG Jia-gui, et al. Journal of Materials Science-Materials in Electronics, 2007, 18(4): 424.