Emission Spectrum Analysis of Laser Ablation on the Silicon Surface
HAN Jing-hua1，2,FENG Guo-ying1*,YANG Li-ming2,YANG Li-ling1,ZHANG Qiu-hui1,XIE Xu-dong3,ZHU Qi-hua3
1. College of Electronics & Information Engineering, Sichuan University, Chengdu 610064，China 2. Chengdu Fine Optical Engineering Research Centre, Chengdu 610041, China 3. Laser Fusion Research Center, China Academy of Engineering Physics, Mianyang 621900, China
Abstract：The free electron density and temperature of laser-induced plasma and the damage on the silicon surface were investigated. The results show that the volume and the free electron density of laser induced plasma, as well as the plasma temperature will determine the profile and the size of silicon superficial damage. It was also found that the volume of laser plasma will increase continuously and the temperature will increase slightly with the increase in the energy of laser pulse, while the density of free electrons will remain invariable. The free electron density and the temperature reduce gradually from centre to edge, so the damage appearance has the following features: The interior area of damage was melted so well that the periodic stripes were formed. The periodic stripes were quite irregular for the area not melted very well. The boundary of damage is apparent and sometimes color changes induced by plasma spattering were observed.
Key words：Laser-induced plasma;Spectrum analysis;Monocrystalline silicon;Electron density;Electron temperature
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