Raman Spectra Studies of MBE-Grown n-GaAs/SI-GaAs Films
WANG Bin1,2,XU Xiao-xuan1,2,QIN Zhe1,2,SONG Ning1,2,ZHANG Cun-zhou1,2*
1. TEDA Applied Physics School, Nankai University, Tianjin 300457, China 2. The Key Laboratory of Advanced Technique and Fabrication for Weak-Light Nonlinear Photonics Materials, Ministry of Education, Nankai University, Tianjin 300457, China
Abstract:n-GaAs films doped with Si were grown by MBE on semi-insulated GaAs (100) substrates. The films with different doping concents were characterized by Raman spectra at room temperature. It is obviously that the Raman peaks shifted. Some peaks were enhanced and some were weakened. This is attributed to the fact that the higher the doping contents, the highertge lattice mismatch. And the lattice misfit induced the imperfection in epitaxy layers. This experimental result coincides with the theory.
[1] LIU Guo-jun,ZHANG Qian-yong,et al(刘国军,张千勇,等). Journal of Changchun Institute of Optics and Fine Mechanics(长春光学精密机械学院学报),1998,22: 18. [2] LIU Guo-jun,ZHANG Qian-yong,et al(刘国军, 张千勇,等). Journal of Changchun Institute of Optics and Fine Mechanics(长春光学精密机械学院学报),1997,21: 6. [3] LUO Yu-hao,LI Ai-zhen,et al(罗宇浩,李爱珍,等). Journal of Functional Materials and Devices(功能材料与器件学报),1997,3(2): 26. [4] ZHANG Li-de,MOU Ji-mei(张立德,牟季美). Physics(物理),1999,28(1): 22. [5] O'Riordan Alan,Tseng Ampere,ZHAO Zhi-long(阿兰·奥瑞尔登, 曾安培, 赵志龙). Micronanoelectronic Technology(微纳电子技术),2005,42(5): 209. [6] WU Tao,ZHANG Xi(吴 涛,张 希). Chemical Research in Chinese Universities(高等学校化学学报),2001,21: 184. [7] MAO Zhen-wei,LI Fan-qing, ZUO Jian, et al(毛振伟, 李凡庆, 左 健, 等). Spectroscopy and Spectral Analysis(光谱学与光谱分析),1993,13(6): 97. [8] YANG Rui-xia,HU Kai-sheng, ZHOU Zhi-hui,et al(杨瑞霞,胡恺生,周智慧,等). Spectroscopy and Spectral Analysis(光谱学与光谱分析),1999,19(1): 22. [9] HUANG Chun,ZHANG Hai-chao,WEN Jin-hui,et al(黄 淳,张海潮,文锦辉,等). Acta Photonica Sinica(光子学报),1999,28(5): 397. [10] TAN Hong-lin,ZHANG Peng-xiang,LIU Xiang, et al(谭红琳,张鹏翔,刘 翔, 等). Spectroscopy and Spectral Analysis(光谱学与光谱分析),2001,21(4): 498. [11] LIN Shun-yong,GAO Yu-lin,et al(林顺勇,高玉琳,等). Journal of Xiamen University·Natural Science(厦门大学学报·自然科学版),2004,43(3): 326. [12] ZHANG Guang-yin,LAN Guo-xiang,WANG Yu-fang(张光寅,蓝国祥,王玉芳). Lattice Vibration Spectroscopy(晶格振动光谱学). Beijing: Higher Education Press(北京:高等教育出版社),2001. 150, 220. [13] WU Ju,HE Hong-jia,et al(吴 巨,何宏家,等). Chinese Journal of Semiconductors(半导体学报),1997,18(7): 558. [14] YANG Bao-hua,WANG Yu-tian,et al(杨保华,王玉田,等). Chinese Journal of Semiconductors(半导体学报),1989,10(2): 3. [15] NIU Shen-jun,WANG Jian-li,LAN Tian-ping(牛沈军,王建利,兰天平). Semiconductor Technology(半导体技术),2006,31(7): 503. [16] AN Zhong,XIE Zun,LI Zhan-jie,et al(安 忠,谢 尊,李占杰,等). Journal of Hebei University of Science and Technology(河北科技大学学报),1998,19(1): 17. [17] SUN Xue-bai,ZHANG Xi-qing,DU Peng, et al(孙学柏,张希清,杜 鹏, 等). Spectroscopy and Spectral Analysis(光谱学与光谱分析),2007,27(1):32. [18] Richter H, Wang Z P, Ley L. Solid State Commum., 1981, 39(7): 625. [19] Pollak F H, Tsu R. Proc. SPIE, 1983, 425: 26. [20] WANG Yang,WU Xiao-bin,WANG Jia,et al(王 阳,吴晓斌,王 佳,等). Spectroscopy and Spectral Analysis(光谱学与光谱分析),2006,26(7): 1253.